Growth and doping of AlGaN and electroluminescence of SAG‐InGaN/AlGaN heterostructure by mixed‐source HVPE

Abstract

The AlxGa1–xN layers on GaN/Al2O3 substrates are grown by mixed‐source hydride vapor phase epitaxy (HVPE) at various temperatures of the source zone. We find source zone temperature dependence of the composition x of AlxGa1–xN layers. Te doping as a new attempt and Si doping in obtaining an n‐type AlGaN layers are performed by putting small amount of Te (or Si) into the Ga‐Al source, respectively. In case of Te‐doped AlGaN (x = 0.16), the carrier concentration is varied from 1.1 x 1018 to 8.0 x 1018/cm3, while in case of Si‐doped one, it is varied from 2.0 x 1016 to 1.1 x 1017/cm3. We find the new results that Te doping is more suitable to get a high n‐type concentration by mixed‐source HVPE. InGaN/GaN multiple quantum wells (MQWs) are grown on the selective area growth (SAG)‐Te‐doped AlGaN and SAG‐Si‐doped AlGaN cladding layer by mealorganic chemical vapour deposition (MOCVD), respectively. Furthermore, we investigate the electroluminescence (EL) properties of SAG‐LEDs of two different cladding layers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

“…Source gases such as HCl, N 2 , and NH 3 were jetted through two quartz tubes for the growth of the epilayers. [23][24][25][26][27][28][29][30][31] Table I shows the growth conditions and measured results of epilayers consisting of a bare chip with an In composition of 11.0% in the active layer. By using a multi-graphite boat filled with the mixed source of In and Ga, the SAG epilayers were deposited by the mixed-source HVPE method on an n-type GaN substrate to fabricate the SAG InGaN LEDs.…”

“…The setup is different from that of previously reported HVPE methods. [23][24][25][26][27][28][29][30][31] The fabrication of the LED by the mixedsource HVPE method is based on the consecutive growth of all epitaxial layers using a multi-graphite boat filled sequentially with mixed-source materials in the source zone at high temperatures (T > 900 °C). 23) This mixed-source HVPE method has the advantages of low manufacturing cost owing to the reduced number of manufacturing steps, consecutive growth of epilayers using the multi-graphite boat, and ease of doping by regulating the mixing ratio of source materials.…”

Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy

“…The quaternary AlInGaN active layer and AlGaN cladding layers were grown on sapphire substrates by using MS-HVPE system. The method of mixed source and the multisliding boat system used in this experiment have been reported at the hands of Kim et al 9,10) Each well was separated by compartments and loaded with the metallic source In (6N) mixed with Ga (6N) and Al (6N). Metal source was etched on condition of 50%-HCl to remove native oxide layer before loading in boat.…”

III-Nitride High Voltage Nitride Electronics

“…Even higher breakdown field could be obtained with higher Al mole fractions. Advanced film deposition techniques have being developed for Al x Ga 1-x N by metal organic chemical vapor deposition (MOCVD) (8)(9)(10) and by hydride vapor phase epitaxy (HVPE) (11). With these new developments, high conductivity n-type Al x Ga 1-x N for Al mole fractions up to 80% has been demonstrated (12).…”