III-Nitride High Voltage Nitride Electronics

Abstract

The recent development of low dislocation density Aluminum Nitride (AlN) substrates allows the realization of a new class of majority carrier power devices. Majority carrier devices based on AlxGa1-xN grown on AlN substrates will be able to operate with breakdown voltages in excess of 20KV. A significant challenge to the development of these devices is the ionization efficiency of donor levels in high Al AlxGa1-xN. Donor ionization energies have been measured as high as .35eV for pure AlN. In order to realize the promise of these devices doped superlattice or modulation-doped blocking structures are proposed. These geometries allow for the realization of high breakdown Schottky barrier diodes and vertical MOS power transistors in high Al AlxGa1-xN.

Thermal behavior of irradiation-induced-deep level in bulk GaN used for fabricating blue light emitting diodes

“…Recent developments within the field of optoelectronics and high-frequency devices have heightened the need for wide bandgap semiconductors such as SiC, GaN, AlN and InN [1][2][3][4]. Among them, GaN has been known as the most suitable material for unique applications in lightemitting diodes (LEDs), and lasers in the blue and ultraviolet range due to its wide direct bandgap of 3.4 eV [5][6][7].…”