Hydrogen-atom assisted CVD of copper at low temperatures and in-situ gas-phase spectroscopy studies

Lee, Wei W.; Locke, P. S.

doi:10.1016/0040-6090(95)05833-8

Cited by 21 publications

(3 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is obvious that H 2 plays a role of promoter as well as cleanser. 16,17 Figure 6 shows the TEM micrographs of Cu films deposited using three different carrier gases, H 2 , Ar, and N 2 . All were deposited on TiW substrates at 200°C and 500 mTorr using a carrier gas flow rate of 100 sccm.…”

Section: Resultsmentioning

confidence: 99%

The CVD growth of Cu films using H2 as carrier gas

Lin

Chen

1999

Journal of Elec Materi

View full text Add to dashboard Cite

Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane (Cu(hfac)TMVS) was studied using a low pressure chemical vapor deposition system of a cold wall vertical reactor. The Cu films deposited using H 2 as a carrier gas revealed no impurities in the films within the detection limits of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Using hydrogen as a carrier gas, the hydrogen not only acts as a reducing agent, but also reacts with the residual fragment of precursor. As a result, using H 2 as a carrier gas for Cu(hfac)TMVS resulted in Cu films of lower resistivity, denser microstructure and faster deposition rate than using Ar or N 2 as the carrier gas. Moreover, we found that N 2 plasma treatment on the substrate surface prior to Cu deposition increased the deposition rate of Cu films.

show abstract

Section: Resultsmentioning

confidence: 99%

The CVD growth of Cu films using H2 as carrier gas

Lin

Chen

1999

Journal of Elec Materi

View full text Add to dashboard Cite

show abstract

“…A method using Cl 2 gas has been already reported by several groups. [6][7][8][9][10] They realized copper film deposition with copper chloride as CVD precursors reduced by hydrogen, which were supplied through thermal evaporation from CuCl powder 6,8,9 or thermal etching of bulk copper by Cl 2 gas. 7 However, copper chloride has some disadvantages such as low vapor pressure that leads to a low growth rate, as well as a residue of chlorine in film that causes corrosion.…”

mentioning

confidence: 99%

“…7 However, copper chloride has some disadvantages such as low vapor pressure that leads to a low growth rate, as well as a residue of chlorine in film that causes corrosion. Furthermore, because their methods need an independent reducing agent such as hydrogen [6][7][8][9] or metallic zinc, 10 there is some risk of a gas phase reaction and contamination.…”

mentioning

confidence: 99%

A Method for Copper Film Deposition with Cl[sub 2] Plasma

Sakamoto

Ogura

Ooba

et al. 2004

J. Electrochem. Soc.

View full text Add to dashboard Cite

This study introduces a method for copper film growth with Cl 2 plasma. The method consists of two stages: generation of the precursor, CuCl, by etching a bulk copper target, and reduction of CuCl adsorbed on a substrate surface. In both reactions, atomic chlorine ͑Cl*͒ generated from the same Cl 2 plasma played the leading role. Copper films were grown on a TaN film ͑50 nm͒ adhesively at a growth rate of 118 nm/min. The obtained copper films had a resistivity of 2.0 ⍀ cm and a Cl content of less than 15 ppm. This method also makes it possible to fill the 0.1 m gap with an aspect ratio of 10.

show abstract

Metal/Polymer Interfacial Interactions

Martini¹,

Kelber²

2003

Springer Series in Advanced Microelectronics

View full text Add to dashboard Cite

Hydrogen-atom assisted CVD of copper at low temperatures and in-situ gas-phase spectroscopy studies

Cited by 21 publications

References 2 publications

The CVD growth of Cu films using H2 as carrier gas

The CVD growth of Cu films using H2 as carrier gas

A Method for Copper Film Deposition with Cl[sub 2] Plasma

Metal/Polymer Interfacial Interactions

Contact Info

Product

Resources

About