A systematic investigation was performed to study the variation of cyclic voltammetry (CV) peaks during cathodic electrodeposition of unary, binary, ternary and quaternary compositions of copper (Cu), selenium (Se), indium (In) and gallium (Ga) on molybdenum/glass electrode. The major objective of the work was to methodically understand the variation of different oxidation-reduction peaks from unary to quaternary composition so that a comprehensible idea on their appearance could be arrived. The electrodeposits were further characterized by anodic stripping voltammetry and frequency response analyzer-impedance spectroscopy. Phase and microstructure of the electrodeposits were examined by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy. The results presented were helpful to arrive at new conclusions on the variation of different CV peaks such as Mo/surface oxide'scharacteristic redox peak and In-characteristic oxidation peak. The present work will be of significance in different application areas like surface coatings, electronics and chalcopyrite solar cells, where electrodeposited Cu-Se-In-Ga is of importance.Electrodeposition has been widely investigated as a simple and economic alternative to the vacuum deposition techniques in fabricating various industrially important materials in thin film and bulk dimensions. 1-4 Electrodeposition of unary, binary, ternary and quaternary compositions of copper (Cu), selenium (Se), indium (In) and gallium (Ga) has a wide range of applications. 1-8 Cu electrodeposition on foreign substrates plays a key role in electronic industry 1 and protective/decorative coatings. 2 Electrodeposition of trigonal Se and compound semiconductors of Se have a variety of interesting applications in solar cells, rectifiers, medical diagnostics and xerography. 4 In has been widely used in alloys, 5 electronics and catalytic organic synthesis. 6 Ga is important in semiconductor and electronics industries due to its unique electrical and thermal properties. Ga plays an important role in achieving high efficiency chalcopyrite solar cells. 3,7,8 One-step electrodeposition was widely investigated for growing large area polycrystalline CuInSe 2 /Cu(In x Ga (1-x) )Se 2 (CIS/CIGS) films on molybdenum (Mo) at potentials as high as −0.90 V (vs. Ag/AgCl). A number of studies have investigated the mechanism of deposition of ternary CIS 9-17 and quaternary CIGS. 13,18-22 Proper understanding of voltammetric behaviors of individual elements and their variation on moving from unary to quaternary composition is vital in optimizing the deposition parameters and elucidating the deposition mechanism. Recent reports demonstrated the potential of electrodeposited ternary and quaternary chalcopyrite absorber layers for various solar energy conversion devices. [23][24][25][26] In spite of a good number of investigations on the electrodeposition of Cu, Se, In and Ga and the various compositions on different electrodes, 1-4,7-46 several concepts and explanations on the origin of differ...