Hydrogen complexes and their vibrations in undoped crystalline silicon

Deák, Péter; Snyder, Lawrence C.; Heinrich, M.; Ortiz, Carlos R.; Corbett, J. W.

doi:10.1016/b978-0-444-89138-9.50035-8

Cited by 5 publications

(3 citation statements)

References 22 publications

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“…44,45 The hydrogen atoms can occupy various sites depending on their charge state. 57 They may be at defects, [56][57][58] form complexes with silicon [59][60][61][62][63] or with dopant atoms, or they may reside interstitially. 57 The charge state of the suspected hydrogen atom or hydrogen-silicon complexes is determined by the Fermi-level of the bulk crystal, which in the present case is in a regime where such species would be negative.…”

Section: Identity Of the T2 Charge Featurementioning

confidence: 99%

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

et al. 2019

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With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electrostatic potential of a semiconductor surface at the sub-nanometer scale. Using non-contact atomic force microscopy, two-dimensional maps of the contact potential difference are used to show the spatially varying electrostatic potential on the (100) surface of hydrogen-terminated highlydoped silicon. Three types of charged species, one on the surface and two within the bulk, are examined. An electric field sensitive spectroscopic signature of a single probe atom reports on nearby charged species. The identity of one of the near-surface species has been uncertain. That species, suspected of being boron or perhaps a negatively charged donor

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Section: Identity Of the T2 Charge Featurementioning

confidence: 99%

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

et al. 2019

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“…Thus, VH 0 should have monoclinic-I symmetry (point group C 1h ) with the Si-H bond bent a few degrees away from a ͗111͘ axis in the mirror plane. These expectations are supported by the results of ab initio calculations [7,8].…”

mentioning

confidence: 55%

Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR

et al. 1997

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The electron paramagnetic resonance spectrum of float-zone silicon recorded after implantation with protons contains a strongly temperature dependent signal from a vacancy-type defect. The signal displays monoclinic-I symmetry below 65 K and trigonal symmetry above 100 K. This symmetry change, together with a hyperfine splitting from a single proton, allows an unequivocal identification with VH 0 , the neutral charge state of a vacancy containing a single hydrogen atom. The striking similarity between the properties of VH 0 and VP 0 (the E center) corroborate our identification. [S0031-9007(97)03778-2]

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“…To find out the nature of the hydrogen passivation of different defects and impurities and their structure, a lot of quantum-mechanical calculations have been performed for different defect configurations [117][118][119][120][121][122][123]. It was demonstrated [117] that the hydrogen saturation of a vacancy or divacancy results in the defect level shift from the forbidden bond towards the valence zone and makes its to be electrically inactive.…”

Section: Hydrogen Neutralization Of Electrical Active Defects and Impmentioning

confidence: 99%

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2008

Semicond. phys. quantum electron. optoelectron.

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The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro-and nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO 2-Si interface and SiO 2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence on the annealing of vacancy defects and the implanted impurity activation in a subsurface implanted silicon layer; and the hydrogen plasma effect on luminescent properties of nanostructured light emitting materials.

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Hydrogen complexes and their vibrations in undoped crystalline silicon

Cited by 5 publications

References 22 publications

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

Electrostatic Landscape of a Hydrogen-Terminated Silicon Surface Probed by a Moveable Quantum Dot

Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR

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