Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR

Nielsen, Bjarne; Johannesen, P.; Stallinga, Peter; Nielsen, K. Bonde; Byberg, J. R.

doi:10.1103/physrevlett.79.1507

Cited by 72 publications

(18 citation statements)

References 16 publications

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“…It is noteworthy that muonium-vacancy complexes in elemental silicon were discovered in the same way, with hyperfine parameters from careful repolarization studies matching those from ESR spectra of hydrogen-vacancy complexes (Schefzik et al 1998, Bech Nielsen et al 1997. In the present case, we envisage the vacancies to be pre-existing, rather than created by the particle implantation; if so, the yield of the new centre in quartz is likely to be sample dependent-as indeed is the diamagnetic Mu + fraction (Catlow et al 1995)-though we have not yet pursued this.…”

Section: The Vacancy Complex and Bridging Sitementioning

confidence: 77%

Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Cox

Gavartin

Lord

et al. 2006

J. Phys.: Condens. Matter

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Following the prediction and confirmation that interstitial hydrogen forms shallow donors in zinc oxide, inducing electronic conductivity, the question arises as to whether it could do so in other oxides, not least in those under consideration as thin-film insulators or high-permittivity gate dielectrics. We have screened a wide selection of binary oxides for this behaviour, therefore, using muonium as an accessible experimental model for hydrogen. New examples of the shallow-donor states that are required for n-type doping are inferred from hyperfine broadening or splitting of the muon spin rotation spectra. Electron effective masses are estimated (for several materials where they are not previously reported) although polaronic rather than hydrogenic models appear in some cases to be appropriate. Deep states are characterized by hyperfine decoupling methods, with new examples found of the neutral interstitial atom even in materials where hydrogen is predicted to have negative-U character, as well as a highly anisotropic deep-donor state assigned to a muonium-vacancy complex. Comprehensive data on the thermal stability of the various neutral states are given, with effective ionization temperatures ranging from 10 K for the shallow to over 1000 K for the deep states, and corresponding activation energies between tens of meV and several eV. A striking feature of the systematics, rationalized in a new model, is the preponderance of shallow states in materials with band-gaps less below 5 eV, atomic states above 7 eV, and their coexistence in the intervening threshold range, 5-7 eV.

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Section: The Vacancy Complex and Bridging Sitementioning

confidence: 77%

Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Cox

Gavartin

Lord

et al. 2006

J. Phys.: Condens. Matter

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“…We illustrate this by comparison of Laplace data obtained for the similar dangling-bond acceptor levels VH͑-/0͒ , V 2 H͑-/0͒, and PV͑-/0͒. The similarity of the electronic structures of these centers has been established by electron paramagnetic resonance (EPR) Bech Nielsen et al 42 and Stallinga et al 43 The neutral charge state of the three defects ( VH 0 , V 2 H 0 , and PV 0 ) has very similar EPR spectral parameters, indicating that the wave functions of the odd electron are indeed very similar. The acceptor level of these centers originate from the emission of an electron from the dangling-bond orbital to the conduction band leaving the orbital singly occupied, and consequently the level energies are also expected to be similar.…”

Section: Dangling-bond Levelsmentioning

confidence: 88%

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Dobaczewski

Peaker

Nielsen

2004

Journal of Applied Physics

291

181

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We present a comprehensive review of implementation and application of Laplace deep-leve1 transient spectroscopy (LDLTS). The various approaches that have been used previously for high-resolution DLTS are outlined and a detailed description is given of the preferred LDLTS method using Tikhonov regularization. The fundamental limitations are considered in relation to signal-to-noise ratios associated with the measurement and compared with what can be achieved in practice. The experimental requirements are discussed and state of the art performance quantified. The review then considers what has been achieved in terms of measurement and understanding of deep states in semiconductors through the use of LDLTS. Examples are given of the characterization of deep levels with very similar energies and emission rates and the extent to which LDLTS can be used to separate their properties. Within this context the factors causing inhomogeneous broadening of the carrier emission rate are considered. The higher resolution achievable with LDLTS enables the technique to be used in conjunction with uniaxial stress to lift the orientational degeneracy of deep states and so reveal the symmetry and in some cases the structural identification of defects. These issues are discussed at length and a range of defect states are considered as examples of what can be achieved in terms of the study of stress alignment and splitting. Finally the application of LDLTS to alloy systems is considered and ways shown in which the local environment of defects can be quantified.

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“…Such a motion was also observed for hydrogen in a vacancy ͑Ͼ200 K͒. 12 It is quite interesting to compare the F0/F2 centers ͑neutral F n V 2 ͒ with neutral hydrogen-vacancy defects 12 Table I. There are still untraced angular maps ͑e.g., F5 and F6͒, suggesting more variety of minor F n V m defects.…”

mentioning

confidence: 83%

Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

Umeda

Isoya

Ohshima

et al. 2010

Applied Physics Letters

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An electron paramagnetic resonance ͑EPR͒ study on fluorine-vacancy defects ͑F n V m ͒ in fluorine-implanted silicon is demonstrated. Fluorine implantation is an important technology for Si microdevices and EPR measurements showed that this process created a variety of F n V m defects of different sizes ͑V 2 , V 4 , and V 5 ͒. In F n V m , a Si-F bond exhibited a different chemical nature compared to a Si-H bond in hydrogen-vacancy complexes. The most primitive defect was FV 2 ͑F0 center͒ and the final types were F n V 5 ͑F1 center͒ and F n V 2 ͑F2 center͒ which increased in annealing processes as low temperature as 200°C.

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Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR

Cited by 72 publications

References 16 publications

Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

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