Hydrogen Dissociation from Mg-doped GaN

Role of stable and metastable Mg–H complexes in p-type GaN for cw blue laser diodes

“…Other studies reported similar results for p-type doped layers grown by MOVPE ͑the discrepancy for low ͓Mg͔ could be explained by the ͓H͔ background which is typically 2 -3 ϫ 10 18 cm −3 ͒. [13][14][15] For ͓Mg͔ Ͼ 3 ϫ 10 19 cm −3 , we observed a saturation of ͓H͔ in as-grown layers. We then assume that all Mg atoms are incorporated under the form of neutral Mg-H complexes for ͓Mg͔ Ͻ 3 ϫ 10 19 cm −3 .…”

Effect of growth conditions on electrical properties of Mg-doped p-GaN

“…Some kind of post-activation such as lowenergy electron beam irradiation (LEEBI) [1] or thermal annealing [2] is needed to activate the Mg acceptors. The main reason for Mg passivation is considered to be hydrogen in the growth chamber [3,4]. Reduction of the amount of hydrogen in the growth process should be an efficient way to achieve better electrical properties in p-GaN layers.…”

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

“…It is well known that the Mg acceptors are passivated by hydrogen, resulting in the formation of electrically inactive Mg-H complexes. Oxygen can dissociate Mg-H complexes and hydrogen atoms will out-diffuse from the Mg-doped GaN epilayer due to the result of H 2 O formation [23][24][25][26]. The SIMS depth profile analysis was performed to confirm the dissociation level of hydrogen as shown in Fig.…”