Hydrogen-Induced Degradation in Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 and PbZr 0.4 Ti 0.6 O 3

Seo, Sunae; Yoon, Jong‐Gul; Kang, Bo Soo; Noh, T. W.; Kim, Ch. J.; Lee, Y. K.; Park, Y. S.

doi:10.1080/713716204

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Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12

Seo

Yoon

Kim

et al. 2002

Applied Physics Letters

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Effects of forming gas annealing (FGA) were investigated on ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films fabricated by a chemical solution deposition. With the FGA up to 350 °C, the Pt/BLT/Pt capacitors showed good ferroelectric characteristics without significant degradation. As the FGA temperature was increased, a decomposition of the BLT powder sample was observed by using thermogravimetric analysis. By comparing the time-dependent weight loss of BLT with that of Bi4Ti3O12 during FGA, La doping was found to significantly impede the decomposition rate. The decomposition, especially in the (Bi2O2)2+ layers, was discussed as a hydrogen-induced degradation mechanism in the Bi-layered perovskite ferroelectrics.

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