Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron

Kilanov, D.V.; Popov, V.; Safronov, L. N.; Nikiforov, A. I.; Sholz, R.

doi:10.1134/1.1582524

Cited by 7 publications

(5 citation statements)

References 5 publications

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“…Interestingly, Kilanov et quasi continuous narrow layer of microcracks at the B delta-layer depth after annealing for 2 h at 200 °C only, whereas without B-layer only a wide region of scattered microcracks was found (21). This is consistent with earlier observations using crosssectional transmission electron microscopy of a large density of (001) platelets (20). As a Ph.D. student at INRS-EMT (University of Quebec), I had the opportunity to contribute to the elucidation the atomic processes involved in both varieties of the ion-cut (22)(23)(24)(25).…”

Section: Layer Transfer Annealingsupporting

confidence: 89%

“…He coined this process the "Smarter-Cut" (19,20). This process is based on the presence of boron (B) at high concentration in silicon donor wafer prior to H ion implantation.…”

Section: The "Smarter-cut": the Idea And The Underlying Physicsmentioning

confidence: 98%

“…Gösele's first contribution (and possibly one of the most significant contributions) to the area of the ion-cut had to do with the development of a process that reduces both the thermal budget and the optimal fluence for silicon thin layer transfer. He coined this process the "Smarter-Cut" (19,20). This process is based on the presence of boron (B) at high concentration in silicon donor wafer prior to H ion implantation.…”

Section: Layer Transfer Annealingmentioning

confidence: 99%

“…Curiously, the effect was 50% weaker if the boron was electrically activated by high temperature annealing prior to H ion implantation. This "Smarter-Cut" approach has successfully been used to transfer silicon layers from silicon wafers onto severely thermally mismatched substrates such as quartz or sapphire (20). Another variety of the "Smarter-Cut" consists of the introduction by homoepitaxy of heavily B-doped layer (delta-layer) followed by undoped Si on top (21).…”

Section: Layer Transfer Annealingmentioning

confidence: 99%

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(Invited) Ion-Cut from Smart to Smarter: Ulrich Gösele's Impact on Science and Technology of Ultrathin Layer Transfer

Moutanabbir¹

2010

ECS Trans.

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Ulrich Gösele made numerous contributions to the science and technology of semiconductor low dimensional systems, heterostructures and nanoscale structures. This paper will be based upon the personal experience of the author who worked directly with Ulrich Gösele on several fundamental and engineering subjects. In particular, the impact of Ulrich Gösele on the basic understanding and applications of the ion-cut process will be addressed.

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Section: Layer Transfer Annealingsupporting

confidence: 89%

“…He coined this process the "Smarter-Cut" (19,20). This process is based on the presence of boron (B) at high concentration in silicon donor wafer prior to H ion implantation.…”

Section: The "Smarter-cut": the Idea And The Underlying Physicsmentioning

confidence: 98%

Section: Layer Transfer Annealingmentioning

confidence: 99%

Section: Layer Transfer Annealingmentioning

confidence: 99%

See 2 more Smart Citations

(Invited) Ion-Cut from Smart to Smarter: Ulrich Gösele's Impact on Science and Technology of Ultrathin Layer Transfer

Moutanabbir¹

2010

ECS Trans.

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“…An interesting approach to overcome this intrinsic limitation is to introduce hydrogen trapping centers into the donor substrate to further improve the hydrogen related cracks localization. Buried boron doped silicon (16) or silicon germanium (17) layers can act as efficient traps for hydrogen, promoting platelets and microcracks formation (18). Epitaxial growth of these layers can have the decisive advantage of a depth localization accuracy that cannot be obtained via ion implantation.…”

Section: Implantation Trapping Layermentioning

confidence: 99%

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

et al. 2014

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Bulk silicon device technologies are reaching fundamental scaling limitations. The 28 nm and 22 nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) devices and FinFETs, respectively. Fully Depleted transistor technologies are mandatory to suppress short channel effects. Today, all major research and development alliances state that the silicon and its Fully Depleted transistor technologies have the potential to address roadmap requirements down to the 10nm node. Innovations will be necessary for lower, more advanced node (under 10nm). Specifications are to continue to ensure a good electrostatic control while providing excellent electrical performance. To meet these demands, several research areas (substrate engineering as well as multiple gate devices and 3D integration) will be involved in integrated circuit fabrication. This paper reports our latest achievements in SOI-type bonded substrates for advanced technology nodes.

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Hydrogen blistering of silicon: Progress in fundamental understanding

Terreault

2007

Physica Status Solidi (a)

119

107

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When silicon is implanted with a sufficient concentration of H ions, at low to moderate temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled blisters and/or craters of exploded blisters appear on the surface. Under particular conditions, blistering can be produced by plasma hydrogenation as well. The phenomenon is another facet of hydrogen behaviour in silicon, a question with both fundamental and applied implications. Blistering is at the origin of the “ion‐cutting” process for the fabrication of silicon‐on‐insulator and other heterostructures; this process is particularly useful whenever atomically sharp interfaces between layers are required. The novelty and vast potential of this process has spurred since the mid‐1990's a burst of experimental activity on blistering. The purposes of those works were either to improve or extend the ion‐cut process, or to clarify its underlying mechanisms. In “mechanisms”, the plural is used to convey the fact that it is a multi‐step phenomenon. Because of this complexity, the theoretical work, in comparison, is far less abundant. Hydrogen blistering of silicon is qualitatively understood in broad terms: H being insoluble in Si, it tends to segregate into cavities which grow and coalesce at high temperature, and the H2 pressure in the cavities finally deforms the surface. In fact, our understanding of the microscopic mechanisms has progressed much beyond that level thanks to the sophisticated work that has been carried out using techniques such as transmission electron microscopy, Rutherford backscattering in the channelling mode, infrared spectroscopy of local vibrational modes, stress and strain measurements, and others. The effects of n‐ or p‐doping, He ion coimplantation, and isotope substitution have also greatly helped in discriminating between different hypotheses. After a review of the most relevant experimental facts, the blistering mechanisms that have been proposed in the literature will be discussed and their conformity with the data assessed. Finally an attempt will be made to identify the key questions and suggest a few avenues for future work. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Hydrogen-induced splitting in silicon over a buried layer heavily doped with boron

Cited by 7 publications

References 5 publications

(Invited) Ion-Cut from Smart to Smarter: Ulrich Gösele's Impact on Science and Technology of Ultrathin Layer Transfer

(Invited) Ion-Cut from Smart to Smarter: Ulrich Gösele's Impact on Science and Technology of Ultrathin Layer Transfer

(Invited) SOI-Type Bonded Structures for Advanced Technology Nodes

Hydrogen blistering of silicon: Progress in fundamental understanding

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