Hydrogen plasma-enhanced thermal donor formation in <i>n</i>-type oxygen-doped high-resistivity float-zone silicon

Simoen, Eddy; Claeys, Corneel; Job, R.; Ulyashin, A.; Fahrner, W.R.; Gryse, O De; Clauws, Paul

doi:10.1063/1.1504487

Cited by 25 publications

(30 citation statements)

References 18 publications

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“…The latter reflect, in fact, the indiffusion of hydrogen, 4-6 suggesting a close correlation between hydrogen and the created shallow donors. It has been suggested in our previous work [4][5][6] that the STDH and OTD centers are created in silicon during hydrogenation and subsequent annealing, respectively.…”

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confidence: 99%

“…3 Apart from the OTD centers, the creation of shallow thermal donors ͑STDs͒ in silicon due to plasma hydrogenation was also reported. [4][5][6] The diffusionlike spatial distribution of the excess free carriers suggests the involvement of hydrogen in the core structure of the STDs. These hydrogen-related STDs are hereafter labelled STDH.…”

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confidence: 99%

“…Hydrogenations are carried out by exposing the silicon wafers directly to hydrogen plasma at 270°C for 2 h. 4 After the hydrogenation, isochronal annealing ͑20 min͒ is carried out up to 450°C. Ohmic contacts and Au Schottky barriers are fabricated for the capacitance-voltage ͑C-V͒ measurements and deep level transient spectroscopy ͑DLTS͒, 6 which is operated with a 1 ms pulse from a reverse bias V R ͑−10 V͒ to various pulse voltages V P and a sampling period of 51.2 ms. Capacitance-temperature ͑C-T͒ curves are recorded at a V R of −10 V.…”

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confidence: 99%

“…These hydrogen-related STDs are hereafter labelled STDH. [4][5][6] A combined theoretical and experimental study has pointed out that the C i O i H ͑interstitial-carbon-interstitial-oxygen-hydrogen͒ complex could be the core of the STDH center. 7 From an electronnuclear double resonance study, it was derived that the STDH and OTD centers have a similar overall structure, except that they are single and double donors, respectively.…”

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confidence: 99%

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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Huang

Simoen

Claeys

et al. 2006

Applied Physics Letters

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In this work, the formation of donors in n-type high resistivity magnetic Czochralski-grown silicon wafers, directly exposed to a hydrogen plasma, is investigated by a combination of capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements. C-V analysis demonstrates diffusionlike concentration profiles close to the surface, pointing to the formation of hydrogen-related shallow donors in silicon during the hydrogenation. In addition, oxygen thermal donors are created during a subsequent annealing (20min) performed at 350–450°C, as demonstrated by DLTS. It is shown that the hydrogen-related shallow donors are the dominant donors in as-hydrogenated samples, while hydrogen acts as a catalyst during the formation of oxygen thermal donors in the temperature range of 350–450°C. It is finally shown that the formation of both kinds of donors is Fermi-level dependent.

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Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Huang

Simoen

Claeys

et al. 2006

Applied Physics Letters

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“…It has also been reported that the presence of hydrogen in the detector fabrication process can enhance the generation of TDs [16]. Potential sources of hydrogen in detector manufacturing are Chemical Vapor Deposition (CVD) process steps using silane (Si 3 H 4 ) gas.…”

Section: Detector Processingmentioning

confidence: 99%

Particle detectors made of high-resistivity Czochralski silicon

Härkönen¹,

Tuovinen²,

Luukka³

et al. 2005

Nuclear Instruments and Methods in Physics Research Section A:

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We have processed pin-diodes and strip detectors on n-and p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900 O cm and 1.9 kO cm for n-and p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit fabrication. This is optimal for semiconductor fabrication as well as for radiation hardness. The radiation hardness of devices has been investigated with several irradiation campaigns including low-and high-energy protons, neutrons, g-rays, lithium ions and electrons. Cz-Si was found to be more radiation hard than standard Float Zone silicon (Fz-Si) or oxygenated Fz-Si. When irradiated with protons, the full depletion voltage in Cz-Si has not exceeded its initial value of 300 V even after the fluence of 5 Â 10 14 cm À2 1-MeV eq. n cm À2 that equals more than 30 years operation of strip detectors in LHC experiments. r

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Defect engineering for modern power devices

Job

Laven

Niedernostheide

et al. 2012

Physica Status Solidi (a)

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Radiation‐induced defects are a common tool in the manufacturing of modern power semiconductor devices. Hydrogen‐related doping is a feasible method to introduce deep doping profiles with a low thermal budget. The hydrogen‐related donors (HDs) require radiation damage and hydrogen, which can be induced by different methods, e.g., proton implantation, helium and proton co‐implantation, or an implantation followed by a hydrogen‐plasma step. The choice of these methods significantly affects the introduction efficiency of the donors and the necessary post‐implantation thermal budget. By controlling the hydrogen‐to‐damage ratio, the manufacturing process of the HD profiles may be moved on a trade‐off between the activation efficiency and the necessary thermal budget. A low hydrogen‐to‐damage ratio leads to an increased activation of the HDs, whereas a high hydrogen‐to‐damage ratio reduces the necessary diffusion time of the hydrogen during the post‐implantation anneal. For the technical usage of hydrogen‐related doping, knowledge of an efficient process window is desirable. In this paper, we consider proton implantation, helium and proton co‐implantation, and a proton implantation followed by a hydrogen‐plasma step as different introduction methods of HD profiles with regard to the activation efficiency of the HDs and the necessary thermal budget.

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Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

Cited by 25 publications

References 18 publications

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon

Particle detectors made of high-resistivity Czochralski silicon

Defect engineering for modern power devices

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