Hydrogen plasma etching of silicon dioxide in a hollow cathode system

Peña, O.; Mühl, S.; López, W.; Rodrı́guez-Fernández, L.; Ruvalcaba‐Sil, José Luis

doi:10.1016/j.tsf.2009.08.042

Cited by 24 publications

(13 citation statements)

References 31 publications

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“…The final state analysis of the trajectories shows that the following surface processes are energetically open to the collision dynamics: (9) The classification of a trajectory is done according to both geometrical and/or energetical requirements. Thus, a H 2,gas molecule is considered as formed when the interatomic H-H distance r is lesser than 2.5 Å and the distance from the surface to the centre of mass of the molecule is larger than 7 Å.…”

Section: Molecular Dynamic Calculationsmentioning

confidence: 99%

A molecular dynamics simulation of hydrogen atoms collisions on an H-preadsorbed silica surface

Rutigliano¹,

Gamallo²,

Sayós³

et al. 2014

Plasma Sources Sci. Technol.

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The interaction of hydrogen atoms and molecules with a silica surface is relevant for many research and technological areas. Here, the dynamics of hydrogen atoms colliding with an H-preadsorbed b-cristobalite (001) surface has been studied using a semiclassical collisional method in conjunction with a recently developed analytical potential energy surface based on Density Functional Theory (DFT) calculations. The atomic recombination probability via an Eley-Rideal (E-R) mechanism as well as the probabilities for other competitive molecular surface processes have been determined in a broad range of collision energies (0.04-3.0) eV eV) for off-normal (q v =45°) and normal (q v =0°) incidence and for two different surface temperatures (T S = 300 and 1000 K). H 2,gas molecules form in roto-vibrational excited levels while the energy transferred to the solid surface is below of 10% for all simulated conditions. Finally, the global atomic recombination coefficient (gE-R) and vibrational state resolved recombination coefficients g(v)were calculated and compared with the available experimental values. The calculated collisional data are of interest in chemical kinetics studies and fluid dynamics simulations of silica surface processes in H-based low-temperature, low-pressure plasmas.

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Section: Molecular Dynamic Calculationsmentioning

confidence: 99%

A molecular dynamics simulation of hydrogen atoms collisions on an H-preadsorbed silica surface

Rutigliano¹,

Gamallo²,

Sayós³

et al. 2014

Plasma Sources Sci. Technol.

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“…This treatment increased the conductance further, from an average ~0.1 μS to ~3 μS at 300 K, the highest average conductance among all fabricated batches. We attribute this relatively high conductance, observed both before and after the final RHP treatment, to hydrogen-plasma induced thinning of the PEALD dielectric during the time when the uncovered tunnel barrier is subjected to the first RHP step [46]. At low temperature the majority of devices subjected to two consecutive RHP exhibit significantly improved SET characteristics (Figure 12a), most notably, with a very strong suppression of RTS noise at Vds ~ 0, as compared to the single RHP treated devices in Figure 11, or FGA treated devices (Figures 7 and 10).…”

Section: Limitations Of the "Double Anneal" Reduction Technique And Smentioning

confidence: 92%

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

et al. 2017

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Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

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“…Etching of SiO 2 by H 2 plasma has been reported in the literature. 11,30,31 The ICP source used for this work is shown in Fig. 9(a).…”

Section: B Film Compositionmentioning

confidence: 99%

Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition

Rayner¹,

O'Toole²,

Shallenberger

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Hydrogen plasma etching of silicon dioxide in a hollow cathode system

Cited by 24 publications

References 31 publications

A molecular dynamics simulation of hydrogen atoms collisions on an H-preadsorbed silica surface

A molecular dynamics simulation of hydrogen atoms collisions on an H-preadsorbed silica surface

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition

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