Hydrogen resistive double-side (Pb0.72La0.28)Ti0.93O3 buffered Pb(Zr0.52Ti0.48)O3 thin films

Abstract

The hydrogen annealing effect and the fatigue resistance of the Pb(Zr0.52Ti0.48)O3 (PZT) thin films with double-side (Pb0.72La0.28)Ti0.93O3 (PLT) buffer layers were investigated. With the PLT buffer layers, the films showed better hydrogen resistance than the PZT films because of the enhancement of the structural properties of the double-side PLT buffered PZT films. This structure also exhibited good fatigue endurance after 109 switching cycles even without oxide electrodes, mainly because the accumulated charges were compensated at the interface between the PLT buffer layers and the electrode. Moreover, the fatigue endurance was maintained even after the hydrogen annealing, so we could confirm the reliability of the structure after the fabrication process.

Effect of Al-doped ZnO or Sn-doped In2O3electrode on ferroelectric properties of (Pb,La)(Zr,Ti)O3capacitors

“…Lee et al reported that the PZT structure (Au=PZT=Pt=Ti=SiO 2 = Si) undergoes serious degradation after H 2 annealing, while the PLT=PZT=PLT structure (Au=PLT=PZT=PLT=Pt=Ti= SiO 2 =Si) does not. 28) Liang et al also reported that a Pt= PZT=BaPbO 3 (BPO) capacitor (Pt=PZT=BPO=Pt=Ti=SiO 2 = Si) suffered severe degradation of ferroelectricity under 3% H 2 =balance N 2 gas annealing at temperatures as low as 175 °C. 34) By contrast, no obvious degradation of BPO=PZT= BPO capacitor (BPO=PZT=BPO=Pt=Ti=SiO 2 =Si) is seen under 3% H 2 =balance N 2 gas annealing at 400 °C.…”

“…27) Lee et al also reported that the double (Pb 0.72 La 0.28 )Ti 0.93 O 3 (PLT) buffer layers that were inserted under and on PZT thin films (Au= PLT=PZT=PLT=Pt=Ti=SiO 2 =Si) conferred better resistance to the H 2 treatment. 28) In this study, we fabricated (Pb,La)(Zr,Ti)O 3 (PLZT) capacitors with various conductive AZO and Sn-doped In 2 O 3 (ITO) buffer layer thicknesses and top electrodes. Then, the ferroelectric properties, H 2 degradation characteristics, and fatigue properties of the AZO=PLZT=AZO=Pt and ITO= PLZT=ITO=Pt capacitors were evaluated.…”