Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect

Abdelmoumen, A. Ben; Cherfi, Rabah; Kechoune, M.; Aoucher, M.

doi:10.1016/j.tsf.2008.08.133

Cited by 18 publications

(13 citation statements)

References 9 publications

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“…The significant variation of R at high pressure is possibly due to the rapid change in the particle mobility diameter, which modifies the film surface of Hterminated Si nanoparticles. 44,45 Note that the trend in the variation of R is similar to that of the ratio X nc /X C size (Figure 4d) except for the films deposited at 30 mTorr. In this sense, the FTIR data (Figure 5) are also consistent with the Raman (Figure 4) and XRD (Figure 3) results.…”

Section: Resultssupporting

confidence: 57%

“…It is apparent from the Figure d that the sharp decrease in the microstructure factor ( R ), which essentially identifies the fast removal of structural imperfections from the network, corresponds to the rapid increase in the surface passivation index ( S ) of the matrix at pressure > 60 Torr, which indicates the transformation from highly crystalline toward the amorphous dominated network prepared at a relatively high pressure. The significant variation of R at high pressure is possibly due to the rapid change in the particle mobility diameter, which modifies the film surface of H-terminated Si nanoparticles. , Note that the trend in the variation of R is similar to that of the ratio X nc / X C size (Figure d) except for the films deposited at 30 mTorr. In this sense, the FTIR data (Figure ) are also consistent with the Raman (Figure ) and XRD (Figure ) results.…”

Section: Results and Discussionmentioning

confidence: 78%

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Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

2017

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Control of plasma and radical generation and associated energy deposition near the growing thin films are still the main challenges in materials fabrication in the plasma-assisted deposition of Si quantum dot (QD) thin film. To control and enhance the material’s performance concerning film properties and application durability, we prepare 2.6 nm sized Si QDs with a fully ordered structure and entrapped them in amorphous silicon nitride using advanced dual frequency capacitively coupled plasmas. Raman and XRD analyses consistent with the high-resolution transmission electron micrographs reveal that the QD size can be controlled and altered from ∼2.6 to 4.0 nm simply by changing the operating pressure, which affects the film’s crystallinity in a broad range from 60% to 72% and the resulting microstructure. Further, a broad visible range ∼ 1.8–3.0 eV photoluminescence, with intense intensity and narrow to broad widths, is observed from Si QDs films. It is also seen that the observed photoluminescence featured is due to the quantum confinement effect within the QD material. Data reveal that the film properties are controllable by modifying a change in the plasma properties and radical parameters. The radio frequency and ultrahigh frequency dual frequency plasmas at low operating pressures have produced a very high atomic density of H and N radicals and a very high plasma density at low electron temperature, which are critically necessary and favorable to the control of film growth, nucleation, and other film properties. It is also seen that the deposition energy plays a significant role for the resulting microstructure and the QD size. The high luminescent yields in the visible range with a PL lifetime of ∼0.75 ns and size-tunable low-temperature deposition with plasma and radical control enable these QD materials as a good candidate for light emitting applications. Additionally, a plausible mechanism is foreseen for the QD film formation.

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Section: Resultssupporting

confidence: 57%

Section: Results and Discussionmentioning

confidence: 78%

Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

2017

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“…The crystallization, morphological, optical and electrical properties of NiO thin films mainly depend on the deposition parameters such as substrate temperature, *Corresponding author: Y. Ashok Kumar Reddy oxygen partial pressure, sputtering power, sputtering pressure, substrate bias voltage and film thickness. It is well known that the properties of as-deposited thin films will be influenced by the substrate temperature (Ts) during deposition (Wang, et al, 2011), (Lu, et al, 2007), (Abdelmoumen, et al, 2008). Since, the density of the point defects and dislocations in the films are modified by applying different substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Temperature on the Properties of DC Reactive Magnetron Sputtered NiO Thin Films

Reddy¹

2010

Int.J.of Curr. Engg. and Technol

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“…4(b) shows that the H content gradually decreases from B5 (at%) to B0.6 (at%) with increasing pressure up to 40 mTorr and then it increases slowly to B3 (at%) at a higher pressure (Z40 mTorr). This reduction and enhancement can be attributed to the breaking of weak Si-Si bonds 56 and the formation of a strong Si-H network due to the change in the energy flux because of the change in the plasma chemistry to be discussed later. This reduction further affects the strong Si-Si bond concentrations that are responsible for the formation of different sized Si QDs, which is apparent from the change in the value of the nanocrystalline fraction (Fig.…”

Section: B Chemical Propertiesmentioning

confidence: 99%

Plasma engineering of silicon quantum dots and their properties through energy deposition and chemistry

Sahu

Yin

Gauter

et al. 2016

Phys. Chem. Chem. Phys.

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The characterization of plasma and atomic radical parameters along with the energy influx from plasma to the substrate during plasma enhanced chemical vapor deposition (PECVD) of Si quantum dot (QD) films is presented and discussed. In particular, relating to the Si QD process optimization and control of film growth, the necessity to control the deposition environment by inducing the effect of the energy of the key plasma species is realized. In this contribution, we report dual frequency PECVD processes for the low-temperature and high-rate deposition of Si QDs by chemistry and energy control of the key plasma species. The dual frequency plasmas can effectively produce a very high plasma density and atomic H and N densities, which are found to be crucial for the growth and nucleation of QDs. Apart from the study of plasma chemistry, the crucial role of the energy imparted due to these plasma activated species on the substrate is determined in light of QD formation. Various plasma diagnostics and film analysis methods are integrated to correlate the effect of plasma and energy flux on the properties of the deposited films prepared in the reactive mixtures of SiH/NH at various pressures. The present results are highly relevant to the development of the next-generation plasma process for devices that rely on effective control of the QD size and film properties.

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Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect

Cited by 18 publications

References 9 publications

Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

Influence of Growth Temperature on the Properties of DC Reactive Magnetron Sputtered NiO Thin Films

Plasma engineering of silicon quantum dots and their properties through energy deposition and chemistry

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