Hydrogenated Amorphous Silicon Gate Driver With Low Leakage for Thin-Film Transistor Liquid Crystal Display Applications

Lin, Chih‐Hsun; Deng, Ming-Yang; Wu, Chia-En; Hsu, Chia-Yang; Lee, Chia‐Lun

doi:10.1109/ted.2017.2718730

Cited by 31 publications

(12 citation statements)

References 18 publications

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“…In particular, as one of essential units in the pixel‐drive circuit, thin‐film transistors (TFTs) play an important role in liquid‐crystal displays (LCDs) and active matrix organic light‐emitting displays (AMOLED), serving as switches' conceptions or drive parts and affecting the aperture ratio of displays . To date, most TFTs based on conventional hydrogenated amorphous silicon (a‐Si:H) and low‐temperature polysilicon (LTPS) have been widely investigated . However, several main obstacles still remain, such as low mobility and instability related to the former while nonuniformity issue to the latter.…”

Section: Introductionmentioning

confidence: 99%

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Chen

Zhang

Wan

et al. 2018

Adv Elect Materials

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High‐performance, transparent, and flexible thin‐film transistors (TFTs) with polycrystalline channels in a bottom‐gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 °C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon‐based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 °C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm2V−1 s−1, a high on/off‐state current ratio of 107 at VDS = 0.1 V, a small subthreshold swing of 0.38 V dec−1, and a proper threshold voltage of 1.34 V as well as an excellent bias stability.

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Section: Introductionmentioning

confidence: 99%

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Chen

Zhang

Wan

et al. 2018

Adv Elect Materials

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“…Third, ultra‐high‐performance TFTs are required for applications demanding ultra‐high resolutions such as mobile, augmented reality (AR), and virtual reality (VR) displays with various functionality and form factors. Finally, the high μ of TFTs enables peripheral circuits to be fabricated out of channel materials instead of using bulky IC chips 6. This makes the design of thin bezels possible, which is preferable for esthetic reasons.…”

Section: Introductionmentioning

confidence: 99%

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

et al. 2020

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As the need for super‐high‐resolution displays with various form factors has increased, it has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a‐Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light‐emitting diode displays, and also to overcome the performance and reliability issues of a‐Si:H, low‐temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a‐Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next‐generation channel materials is discussed.

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“…ate driver circuit integration using thin-film transistors (TFTs) becomes important for the-state-of-the-art active matrix displays. Thanks to the gate driver integrations at the peripheral area, high resolution displays with narrow bezel, simplified module process and reduced cost can be achieved [1], [2]. Although already being widely used in TFT-LCD products of mobile phones, tablets, and TV displays, TFT integrated gate driver design is still challenging for the in-cell touch TFT-LCD display.…”

Section: Introductionmentioning

confidence: 99%

Capacitor Reused Gate Driver for Compact In-Cell Touch Displays

Shen

Liao

Yang

et al. 2021

IEEE J. Electron Devices Soc.

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Hydrogenated Amorphous Silicon Gate Driver With Low Leakage for Thin-Film Transistor Liquid Crystal Display Applications

Cited by 31 publications

References 18 publications

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Capacitor Reused Gate Driver for Compact In-Cell Touch Displays

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