“…The best efficiency of 18.5% (independently confirmed) was realised with a single layer a-SiC:H(N) emitter with a thickness of 11 nm [3]. PECVD technique offers an attractive opportunity to fabricate amorphous hydrogenated SiC and N-doped SiC layers at intermediate substrate temperatures and it provides high quality layers with good adhesion, good coverage of complicated substrate shapes and high deposition rate [4,5]. The a-SiC:H thin layers deposited by PECVD as protective coatings for harsh environment applications were investigated [6].…”