Hydrogenated nanocrystalline silicon thin film prepared by RF-PECVD at high pressure

Amorphous, Polymorphous, and Microcrystalline Silicon Thin Films Deposited by Plasma at Low Temperatures

“…However the values of E opt are in agreement with those reported in [33], where the μc-Si:H thin films have larger E opt values than those of a-Si:H. vs. photon energy) of μc-Si:H films as a function of the RF power.…”

“…Table 3 shows the H 2 content results and is observed that H 2 increases as the pressure increases. Also in Figure 10 a shift from 700 cm −1 to 640 cm −1 from the film deposited at lower pressure to the film deposited at higher pressure is observed, which could be related to the evolution of hydrogen content on the films, and associated to the presence of nanocrystals in the films deposited at higher pressure [33]. At higher pressures there is a change in the discharge regime, which results in the formation of silicon nanocrystals (up to 2 nm), during the growth of pmSi:H films [34,35], and that is in agreement with the values of R a in our AFM analysis.…”

Deposition and characterization of amorphous silicon with embedded nanocrystals and microcrystalline silicon for thin film solar cells

“…It has ben found that by modifying the deposition conditions as deposition pressure and RF power density is possible to produce hydrogenated microcrystalline silicon (lc-Si:H) films, in which the size of nano/micro crystals are in the range of hundreds of nanometers [5][6][7][8][9]. The growth of nc-Si:H/lc-Si:H thin films by PECVD requires high hydrogen (H 2 ) dilution of SiH 4 [8]; H 2 dilution has been widely used for the growth of microcrystalline silicon films and the transition from amorphous to microcrystalline has been reported as a function of the ratio R = (H 2 /SiH 4 ) [8][9][10][11].…”

“…The growth of nc-Si:H/lc-Si:H thin films by PECVD requires high hydrogen (H 2 ) dilution of SiH 4 [8]; H 2 dilution has been widely used for the growth of microcrystalline silicon films and the transition from amorphous to microcrystalline has been reported as a function of the ratio R = (H 2 /SiH 4 ) [8][9][10][11].…”

“…The effect of the RF power density and the H 2 and Ar dilution on the film structural properties has been studied [8,[10][11][12], and also the deposition of nanocrystalline silicon thin films at very high frequency VHF-PECVD using SiH 4 with a Ar dilution has been reported [1,7].…”