Hyper-NA imaging of 45nm node random CH layouts using inverse lithography

Hendrickx, Eric; Tritchkov, Alexander; Sakajiri, Kyohei; Granik, Yuri; Kempsell, M.; Vandenberghe, Geert

doi:10.1117/12.771961

Cited by 16 publications

(8 citation statements)

References 4 publications

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“…Sub-resolution Assist Feature (SRAF) insertion using a mask synthesis process based on pixel-based mask optimization schemes known as inverse lithography (IL) has been studied [1] and experimented with in recent years for various lithographical schemes, including 6% attenuated PSM (AttPSM) with off-axis illumination such as Quasar [2]. Detailed experimental investigation on the application of inverse lithographical techniques for Quasar illumination with 6% as well as 30% AttPSM background was also conducted recently using AIMS TM -45 [3].…”

Section: Introductionmentioning

confidence: 99%

Application of pixel-based mask optimization technique for high transmission attenuated PSM

et al. 2009

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Sub-resolution assist features (SRAF) insertion using mask synthesis process based on pixel-based mask optimization schemes has been studied in recent years for various lithographical schemes, including 6% attenuated PSM (AttPSM) with off-axis illumination. This paper presents results of application of the pixelbased optimization technology to 6% and 30% AttPSM mask synthesis. We examine imaging properties of mask error enhancement factor (MEEF), critical dimension (CD) uniformity, and side-lobe printing for random contact hole patterns. We also discuss practical techniques for manipulating raw complex shapes generated by the pixel-based optimization engine that ensure mask manufacturability.

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Section: Introductionmentioning

confidence: 99%

Application of pixel-based mask optimization technique for high transmission attenuated PSM

et al. 2009

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“…To assess the impact of the simplification over the image quality, resultant process windows among these cases should be compared. Reference [7] looks into these questions, and finds that the impact of the simplification and MRC in terms of process windows is generally small. However, further improvements in this regard will be part of our future study.…”

Section: Mask Making Considerationmentioning

confidence: 99%

Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond

2008

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SRAF insertion through inverse microlithography methodologies has been explored at length in recent years as one of the most promising approaches to determining the right placements of Model-based SRAF (MBSRAF) for complex two dimensional geometrical configurations for advanced nodes. This work will discuss the latest development of MBSRAF insertion software at Mentor Graphics. The software system operates on the principles of inverse methods of microlithography or pixel inversion. The ability to examine the image of every pixel in the work region as well as the mathematical solution to synthesize the mask shapes as a cost minimization problem make it possible to reliably deal with SRAF insertion for advanced illumination schemes such as quasar, dipole and cross-quad. Pixel inversion involving high transmission attenuated PSM as well as hard PSM will be also discussed. We will also report on the MRC capability to make the pixel inversion mask shapes manufacturable.

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“…Commonly a resulting pattern is a sized original surrounded by assist features or a split original, which may be described as having inverted assist features. Further simplification through a post-processing layout clean-up provides printable patterns [3] without features that are too small or randomly oriented, that vary in complexity and fidelity.…”

Section: Ilt Overviewmentioning

confidence: 99%

Manufacturability of ILT patterns in low-NA 193nm environment

et al. 2009

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With escalating costs of higher-NA exposure tools, lithography engineers are forced to evaluate life-span extension of currently available lower-NA exposure tools. In addition to common resolution enhancement techniques such as off-axis illumination, edge movement, or applying sub-resolution assist features, Inverse Lithography Technology (ILT) tools available commercially at this moment offer means of extending current in-house tool resolution and enlarging process window for random as well as periodic mask patterns. In this paper we explore ILT pattern simplification procedures and model calibration for a range of illumination conditions. We study random pattern fidelity and critical dimension stability across process window for 65nm contact layer, and compare silicon results for both conventional optical proximity correction and inverse lithography techniques.

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Hyper-NA imaging of 45nm node random CH layouts using inverse lithography

Cited by 16 publications

References 4 publications

Application of pixel-based mask optimization technique for high transmission attenuated PSM

Application of pixel-based mask optimization technique for high transmission attenuated PSM

Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond

Manufacturability of ILT patterns in low-NA 193nm environment

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