hyperspy/hyperspy: Release v1.6.4

Peña, Francisco de la; Prestat, Éric; Fauske, Vidar Tonaas; Burdet, Pierre; Furnival, Tom; Jokubauskas, Petras; Lähnemann, Jonas; Nord, Magnus; Ostasevicius, Tomas; MacArthur, Katherine E.; Johnstone, Duncan N.; Sarahan, Mike; Taillon, Joshua; Aarholt, Thomas; pquinn-dls,; Migunov, Vadim; Eljarrat, Alberto; Caron, Jan; Poon, Timothy; Mazzucco, Stefano; Martineau, Baudouin; actions-user,; Somnath, Suhas; Slater, Tom; Francis, Carter; Tappy, Nicolas; Walls, John M.; Cautaerts, Niels; Winkler, Florian; Donval, Gaël

doi:10.5281/zenodo.5082777

Cited by 9 publications

(4 citation statements)

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“…[35] The resulting spectra were extracted using the HyperSpy python package and denoised using principle component analysis (PCA), retaining only the first four components, which accounted for 96.8% of the variance. [36]…”

Section: Methodsmentioning

confidence: 99%

Making BaZrS₃ Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

Sadeghi

et al. 2021

Adv Funct Materials

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The making of BaZrS 3 thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS 3 forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS 6 octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS 3 stoichiometry and an atomically sharp interface with the LaAlO 3 substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in highquality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-VIs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.

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Section: Methodsmentioning

confidence: 99%

Making BaZrS₃ Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

Sadeghi

et al. 2021

Adv Funct Materials

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“…Representative line scans for each sample were selected based on the roomtemperature ensemble PL spectra. The CL data was analyzed and visualized using the python packages HyperSpy and LumiSpy [29,30].…”

Section: Methodsmentioning

confidence: 99%

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core–shell nanowires emitting in the green spectral range

van Treeck,

Lähnemann,

Brandt

et al. 2023

Nanotechnology

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Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a qualitative shell growth model accounting for both the three-dimensional nature of the nanostructures as well as the directionality of the atomic fluxes. This model allows us, on the one hand, to optimise the conditions for high and homogeneous In incorporation and, on the other hand, to explain the influence of changes in the growth conditions on the sample morphology and In content. Specifically, the impact of the V/III and In/Ga flux ratios, the rotation speed and the rotation direction are investigated. Notably, with In acting as surfactant, the ternary (In,Ga)N shells are much more homogeneous in thickness along the NW length than their binary GaN counterparts.

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“…The resulting spectrum images were analysed using HyperSpy. 34 Briefly, the zero-loss peak was aligned to 0 eV, along with shifting the core-loss spectrum for each pixel. Then Mn L-edge was fitted at each pixel with: (i) a power law background, (ii) two Hartree–Slater generalised-oscillator-strength based ionisation edges, (iii) two Gaussian peaks (for the L 3 and L 2 white line peaks), and (iv) their convolution with the low-loss spectrum to account for the sample thickness.…”

Section: Methodsmentioning

confidence: 99%