Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity

Lue, Cheng-En; Wang, Jer‐Chyi; Pijanowska, Dorota G.; Yang, Chia−Ming; Wang, I-Shun; Lee, Huang-Chia; Lai, Chao−Sung

doi:10.1016/j.microrel.2010.01.026

Cited by 16 publications

(7 citation statements)

References 10 publications

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“…The higher operation voltage could also lead to an incremental variation of threshold voltage, the drift value, of the sensing membrane. 31,32) In our study, the improvement in the drift is similar to that of previous studies. 8,11) The advantage of using APTES/SiO 2 sensing membrane is not so obvious.…”

Section: Resultssupporting

confidence: 91%

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Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Chen

Tseng

2022

Jpn. J. Appl. Phys.

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This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensitivity, and suppressed the hysteresis. The DG structure was preferred to have a capacitive coupling effect and to amplify the sensitivity of ISFETs. The sensitivities of SG- and DG-ISFETs were approximately 56.8 and 294 mV/pH, respectively. In addition, the corresponding amplifying factor was approximately 5.2. With this approach, the poly-Si DG-ISFETs can be a candidate for future high-performance biochemical sensing applications.

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Section: Resultssupporting

confidence: 91%

“…The reason is that the hysteresis was also affected by the capacitive coupling effect, and the higher operation voltage. 31,32) To compare the capacitive coupling effect, we extracted the percentage error of DG hysteresis from sensitivity. Here the percentage error is defined as the quotient of hysteresis and sensitivity values.…”

Section: Resultsmentioning

confidence: 99%

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Chen

Tseng

2022

Jpn. J. Appl. Phys.

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“…In order to understand the role of APTES modification on pH sensitivity, C-V hysteresis measurements were conducted in the devices with planar, silanized and textured (with particles of 135 nm diameter) dielectrics at pH 4 by sweeping the voltage up from −3 V to 2 V and then down from 2 V to −3 V. Figure 3 clearly shows an increase in hysteresis upon silanization up to 76 mV from the base value of 28 mV (for planar EIS) and a decrease subsequently upon texturing to an intermediate level of 56 mV. Lue et al 24 attributed the hysteresis effect and the reduced pH sensitivity to the large number of interface traps present at the oxide-semiconductor interface due to the lattice mismatch in the Si/Si 3 N 4 based EIS. However, in the present case, both the C-V hysteresis and the pH sensitivity increased upon texturing, suggesting the hysteresis phenomenon in the EIS devices was induced by the silanization instead of any increase in the interface states at the oxide-semiconductor interface.…”

Section: Effect Of Silanization/texturing On Capacitance-voltage (C-v...mentioning

confidence: 99%

“…Interface states (N ss ).-Interface states (traps) present at the dielectricsemiconductor interface cause hysteresis in the C-V characteristics of the EIS devices and, in turn, influence the pH sensitivity. 24 In order to study the effect of texturization, the density of the interface states (N ss ) at the oxide-semiconductor junction was obtained from C-V and G-V plots using the Hill-Coleman method. 17 Table II lists the values of N ss of various MOS devices.…”

Section: Effect Of Silanization/texturing On Capacitance-voltage (C-v...mentioning

confidence: 99%

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Kumar

Panda

2015

ECS J. Solid State Sci. Technol.

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The possible mechanisms governing the enhancement of sensitivities of Electrolyte-insulator-semiconductor (EIS) devices upon surface modification (texturing) realized by electrostatic attachment of silica particles using 3-aminopropyl triethoxysilane (APTES) as a linker are presented. EIS devices were fabricated with a textured dielectric surface using SiO 2 particles (of diameters 475, 135, and 70 nm) and screen printed Ag/AgCl electrodes. A maximum pH sensitivity of 52.4 mV/pH was achieved for the EIS device textured with 70 nm particle size while the sensitivity with the planar dielectric was 37.1 mV/pH. The APTES modification enhanced the adsorption of H + ions by protonation of the -NH 2 to -NH 3 + sites as seen from the capacitance versus voltage (C-V) hysteresis voltages. UV-Vis absorption and photoluminescence (PL) spectra indicated that the surface defects on the textured surface increased with decreasing particle size. Zeta potential measurements suggested a combined acid-base behavior of textured surface with the formation of -NH Electrolyte-insulator-semiconductor (EIS) based sensors are advantageous because of their small size, potential for mass production at low cost and easy integration with other silicon devices. The working principle is based on the MOS device with the electrolyte replacing the metal. Chemical sensitivity is an important performance parameter and is defined as the change in potential at the insulatorelectrolyte interface occurring with the change in the pH of the electrolyte. To improve the sensitivity, various high-K dielectric materials (such as Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 , Gd 2 O 3 , Pr 2 O 3 , TiO 2 , Er 2 O 3 , Sm 2 O 3 and HoTiO 3 ) have been used to enhance the field effect interaction and the buffer capacity of the insulator. Also, their stack reduces the interface defects between the semiconductor and the insulator. 1-8The surface modification is another way by which the sensitivity can be improved. For example, Cheng et al. 9 used hydroxylated surface modified with 3-aminopropyl triethoxysilane (APTES) to show slight enhancement in the pH sensitivity and attributed the changes to the added contribution of the -NH 2 groups having higher proton affinity with improved signal-to-noise ratio. He et al.10 observed a linear pH response with the combined acidic and basic characteristics of -NH 2 and -SiOH groups on the APTES modified ZnS/silica nanocable field effect transistor. Hsu et al.11 designed a glucose sensor based on a poly-silicon wire coated with a mixture of γ-APTES and silica nanoparticles (NPs). The improved detection limit was attributed to the large specific surface area of the silica NPs cluster and the increased amount of OH-bonds. Wu et al.12 fabricated a label free DNA detection device with sensitivity in the range 1 fM-10 μM by utilizing a mixture of UV illuminated γ-APTES and silica NPs. Further, Oh et al. 13 used silicon nanowires and improved the pH sensitivity from 54.9 mV/pH to 60.2 mV/pH. Xue et al.14 fabricated a Si/SiO 2 thin-film based ion-se...

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“…Particularly, the sensing membranes comprised thin SiO 2 and Al 2 O 3 layers are designed for good interface property and strong immunity against the chemical solutions, respectively. 15,16) In general, for deposition of this Al 2 O 3 materials, vacuumprocessed deposition methods such as sputtering, atomic layer deposition (ALD) or chemical vapor deposition (CVD) are used. [17][18][19] However, these process techniques require very expensive equipments and high fabrication cost despite the good performance of oxide layers.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al₂O₃Sensing Membranes

Bae

Jang

Lee

et al. 2013

Jpn. J. Appl. Phys.

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The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited to 59 mV/pH, which is the maximum value in electrochemical potential according to the Nernst equation. Here, the silicon-on-insulator (SOI) based dual-gate (DG) ISFETs with SiO2/Al2O3 (OA) using solution based process was evaluated to obtain higher pH sensitivity. The device exhibited a significantly enhanced pH sensitivity of 407.3 mV/pH for the DG operation by capacitive coupling between top and bottom gate oxide. Therefore, the SOI-based ISFETs using solution process and the DG monitoring method are very promising to biological sensors application in terms of high performance and large process area.

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Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity

Cited by 16 publications

References 10 publications

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al₂O₃Sensing Membranes

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Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity

Cited by 16 publications

References 10 publications

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

Sensitivity Enhancement Mechanisms in Textured Dielectric based Electrolyte-Insulator-Semiconductor (EIS) Sensors

Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al2O3Sensing Membranes

Contact Info

Product

Resources

About

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO₂ stack-sensing membrane

Enhanced Sensing Properties by Dual-Gate Ion-Sensitive Field-Effect Transistor Using the Solution-Processed Al₂O₃Sensing Membranes