In situ doping of GedxSi1−x with arsenic by rapid thermal processing chemical vapor deposition

Abstract

We report the growth of GexSi1−x epitaxial layers in situ doped with arsenic by rapid thermal processing chemical vapor deposition at 800 and 900 °C. Films were grown with activated doping levels of up to 2×1019 cm−3 and dopant transition widths (1019–1015 cm−3) of better than 350 Å. Doping was observed to reduce growth rates and significantly improve film quality. Defect densities of the order of 103 cm−2 were achieved with normalized film strains of up to 99%.

Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications

“…The ;2.6 mA saturated photocurrent gives a ;0.39 A/W device responsivity. The dark current and optical responsivity of the photodetector are comparable with reported values 74,[87][88][89][90][91][92] and are summarized in Table II. Considering surface optical reflection and metal contacts shielding, the responsivity of the photodetector is expected to be even higher, demonstrating an excellent potential of the GOI platform as an enabler for the on-chip electronic-photonic integration.…”

“…In addition, the As dopants may also help to promote the migration of Ge atoms during the high-temperature annealing which further improves the smoothness of the Ge epilayer. 74 A comparison table which summarizes the quality of Ge epitaxial films on Si substrates using different approaches is shown in Table I.…”

Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

“…Previous experimental investigations have focused on exploring the optimal conditions for achieving goals such as suppressing lateral autodoping, 6 determining the impact on the growth rate, 7 growing highly-doped layers of poly-Si, 8 or Ge x Si 1Àx alloys. 9 By the analysis of the mechanism governing the doping from the As segregated layer, good results were in the past achieved and applied to the growth of high-doped abrupt As peaks. 10 However, none of the previous studies characterizes the growth parameters with enough detail to provide a general method for determining the growth parameters for non-uniform doping profiles.…”