In-situthermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation

Abstract

In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal-oxide-semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of -580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.

Repairable Polymer Solid Electrolyte Gated MoS2 Field Effect Devices with Large Radiation Tolerance

“…This annealing temperature is quite low compared with that of the Si‐based ICs, which is over 300 °C with comparable time. [ 27 ] The annealing‐induced recovery of a typical MoS 2 PSE‐inverter is similar to that of a single MoS 2 PSE‐FET, in which V tr exhibits a positive shift after irradiation and a partial recovery after annealing.…”

“…[25] Nevertheless, further irradiation will still lead to failure of MoS 2 PSE devices. Such "failure" is defined according to standards of commercial radiation-hardened Si-based ICs, as the change of threshold voltage ΔV th or ΔV tr > 0.3 V. [26] For Sibased ICs, thermal annealing processes of about 300-900 °C for 4-30 min, [27,28] or around 100 °C for several hours have been employed to partially recover the initial threshold voltage. [29] In PSE devices, we found that a much milder condition could induce a large recovery effect.…”

A Low-Power and In Situ Annealing Technique for the Recovery of Active Devices After Proton Irradiation

“…the thermally activated dopant diffusion or the degradation of the metal layers, a wide variety of reliability issues related to the different coefficients of thermal expansion for System-in-Package (SiP) technology, and by the bulky equipments and their high power consumption needed to achieve the thermal treatment. Recent works improved a revolutionary success by improving an in situ low power total recovery of semiconductor based devices after high gamma dose irradiation [6]. In this work, our interest is rather focusing on the proton radiation, by studying the electrical characteristics of SOI electronic components embedded in a 5 µm-thick microhotplate membrane and analyzing the degradations that appeared after proton irradiation.…”

On-Chip Curing by Microwave for Long Term Usage of Electronic Devices in Harsh Environments

“…In contrast to the abovementioned recovery method in a unit transistor level, other groups suggested recovery methods utilizing an embedded heater module, which was intercalated into a package 9–13 , i.e., interior heater. In terms of layout efficiency, the recovery method in the package level is more preferred than that in the transistor level.…”

“…But, the former still accompanies with extra fabrication of heater module including temperature sensor and its assembly and is not a cost-effective approach, either. In addition, it demanded relatively high power for heating and the induced heat distribution was not uniform 9 . Hence longer recovery time was required.…”