<i>L</i>-point backfolding in ordered<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GaInP</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>determined by electroabsorption measurements

Kippenberg, T.; Krauß, J.; Spieler, J.; Kiesel, P.; Döhler, G. H.; Stubner, R.; Winkler, Roland; Pankratov, Oleg; Moser, M.

doi:10.1103/physrevb.60.4446

Cited by 12 publications

(15 citation statements)

References 11 publications

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“…This shows that results presented in Ref. [5] for [0 0 1] ordering are tenuous, with better evidence being obtained from Raman studies [23], electroabsorption [24] and high pressure fitting work [16].…”

Section: Sample Comparisonmentioning

confidence: 60%

“…A similar process can be undertaken for other work where suitable information is provided [16] correcting for compressive and tensile strains. Kippenberg et al [7,24] showed by electroabsorption that DE BGR is not entirely due to the shift in the conduction band, but that 22% of it comes from the valenceband maximum being shifted up with ordering. Based on this assumption we have produced Fig.…”

Section: Sample Comparisonmentioning

confidence: 99%

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Measurement of conduction band minima in ordered and disordered GaInP

Prins

Sly

Dunstan

et al. 2004

Journal of Crystal Growth

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Section: Sample Comparisonmentioning

confidence: 60%

Section: Sample Comparisonmentioning

confidence: 99%

Measurement of conduction band minima in ordered and disordered GaInP

Prins

Sly

Dunstan

et al. 2004

Journal of Crystal Growth

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“…(1). Based on this linear approach, our predicted pressure coefficient at the proposed maximum ∆E BGR compared to the theoretical work of [4] would seem to back up the proposal of [7,9] Without a study of layers from different growth techniques coupled with consistent characterisation the current results present the best and only determination to date of the effects of ordering on the pressure coefficient of GaInP nominally lattice matched to GaAs. We propose a relative determination between samples from Eq.…”

Section: Discussionmentioning

confidence: 71%

“…The best fit to the current experimental data is found in [7] to be that proposed by [8] and gives a maximum value for ∆E BGR of 0.223 eV. Kippenberg et al [9] showed by electroabsorption that ∆E BGR is not due entirely to the shift in the conduction band, but that 22% of it comes from the valence band maximum being shifted up with ordering. They were able to apply exact linear fits against ∆E BGR to the absolute band structure data measured.…”

Section: Introductionmentioning

confidence: 79%

Determination of ordering effects on GaInP pressure coefficients

Prins¹,

Sly

Dunstan

et al. 2004

Physica Status Solidi (b)

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We report the determination of pressure coefficients for ordered and disordered GaInP samples measured in the same diamond anvil cell experiment at 10 K. Results are compared to measurements using substrate calibration and data available in the literature. Using previous theoretical calculations and experimental work we propose a linear model based on the band-gap reduction with ordering to calculate pressure coefficients. To date this is the only available method to quantifying this change. All layers measured were grown nominally lattice matched to GaAs.

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“…The reason for the failure to observe E + transitions in the PR spectra of the samples with y = 0.005 and 0.010 will be discussed below. The features observed ~0.4-0.5 eV above the 0 E (or E -) transition for samples with y = 0, 0.005, and 0.010 originate from the back-folded conduction L band induced by ordering effect [12]. These features are relatively weak due to the very weak coupling of the back-folded L states with the original Γ point states.…”

Section: Resultsmentioning

confidence: 96%

Analysis of band anticrossing in InGaPN alloys grown on GaAs substrates

Lin

Wang

et al. 2008

Phys. Status Solidi (c)

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The band anticrossing (BAC) model is introduced to describe the influence of the incorporated nitrogen on the band structure of dilute nitrides. An isolated N introduces highly localized states in these nitrides, which interact with the extended conduction‐band states of the host semiconductor. The interaction splits the conduction band into an upper and a lower subband. There are reports of the band‐gap reduction in InGaPN, but no experimental observations of the upper subband have been reported. In this work, temperature‐dependent photoreflectance (PR) and photoluminescence (PL) spectra are employed to examine the band structure of InGaPN/GaAs heterostructures. Besides the band gap, the upper subband predicted by the BAC model is observed in the PR spectra. By eliminating the contributions of the strain and ordering effects in InGaPN, and assigning the localized state energy EN introduced by an isolated N to be 2.04 eV at 293 K, the interaction potential is determined as 1.449±0.170 eV. With N incorporation, the PL peak energy exhibits a particular behavior with temperature, which is not observed in the PR spectra. This is attributed to carrier localization at low temperatures occurring in N‐diluted semiconductors. Additionally, the temperature dependence of the band gap is described by the BAC model incorporating two different EN levels, either constant or temperature‐dependent. In our hands, the assumption of the temperature‐dependent EN level results in a better fit with the experimental data. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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L-point backfolding in orderedGaInP2determined by electroabsorption measurements

Cited by 12 publications

References 11 publications

Measurement of conduction band minima in ordered and disordered GaInP

Measurement of conduction band minima in ordered and disordered GaInP

Determination of ordering effects on GaInP pressure coefficients

Analysis of band anticrossing in InGaPN alloys grown on GaAs substrates

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