<i>P</i>-type conductivity in annealed strontium titanate

Poole, V.; Corolewski, Caleb; McCluskey, M. D.

doi:10.1063/1.4938521

Cited by 8 publications

(2 citation statements)

References 25 publications

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“…The free carriers persist for days or weeks after the light is turned off, at room temperature. The specific defect that causes PPC has not been identified, but the results are consistent with a native acceptor defect such as a V Ti – V O pair 13 . Annealing in vacuum prior to the 1200 °C anneal yields optimal PPC behavior 14 .…”

Section: Introductionmentioning

confidence: 97%

Using persistent photoconductivity to write a low-resistance path in SrTiO3

Poole

Jokela

McCluskey

2017

Sci Rep

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Materials with persistent photoconductivity (PPC) experience an increase in conductivity upon exposure to light that persists after the light is turned off. Although researchers have shown that this phenomenon could be exploited for novel memory storage devices, low temperatures (below 180 K) were required. In the present work, two-point resistance measurements were performed on annealed strontium titanate (SrTiO3, or STO) single crystals at room temperature. After illumination with sub-gap light, the resistance decreased by three orders of magnitude. This markedly enhanced conductivity persisted for several days in the dark. Results from IR spectroscopy, electrical measurements, and exposure to a 405 nm laser suggest that contact resistance plays an important role. The laser was then used as an “optical pen” to write a low-resistance path between two contacts, demonstrating the feasibility of optically defined, transparent electronics.

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Section: Introductionmentioning

confidence: 97%

Using persistent photoconductivity to write a low-resistance path in SrTiO3

Poole

Jokela

McCluskey

2017

Sci Rep

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“…It is well known that STO is a good insulator, but the positive photocurrent for the pristine STO suggests its weak p-type semiconducting nature due to the possible existence of Sr or Ti vacancies from nonperfect chemical stoichiometry during crystal growth at very high temperature. It has been reported that 1000 C annealing can induce Sr vacancies leading to p-type semiconducting of STO, [25][26][27] and the corresponding energy band diagram between Au and p-type STO is shown in Fig. 4(a).…”

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confidence: 99%

Oxygen vacancy and photoelectron enhanced flexoelectricity in perovskite SrTiO3 crystal

Jin

Zhang

Suen

et al. 2021

Applied Physics Letters

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Photo-enhanced flexoelectricity or flexoelectricity-enhanced photovoltaic effect, named photo-flexoelectric, is an interesting topic and has application potential in photo-electro-mechanical devices. However, this effect is far from being well understood. In this work, we demonstrate the photoflexoelectric effect in perovskite-structured SrTiO3 (STO) single crystal and reveal the coupling mechanism between its photovoltaic and flexoelectric effect. Driven by the flexoelectric field, light-induced electrons can tunnel through the Schottky junction at the Au/STO interface, giving rise to enhanced flexoelectricity, i.e., photoflexoelectric effect. Thermal annealing in vacuum induces oxygen vacancies in STO and results in stronger light absorption and enlarged photoflexoelectric effect.

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