<i>Plasmas and Laser Light</i>

Hughes, T. P.; Bayfield, J. E.

doi:10.1063/1.3037501

Cited by 35 publications

(47 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Partially ionized gas absorbs light by thermally excited atoms as well as by electrons and ions (inverse-Bremsstrahlung absorption) (Hughes 1975). Light absorption further heats the vapor, which leads to even more ionization and absorption.…”

Section: Evaporation Plasma Formation and Plasma Propagation 231 Ementioning

confidence: 99%

Ultrafast Fabrication of Metal Nanostructures Using Pulsed Laser Melting

Cui¹

2011

Recent Advances in Nanofabrication Techniques and Applications

View full text Add to dashboard Cite

Section: Evaporation Plasma Formation and Plasma Propagation 231 Ementioning

confidence: 99%

Ultrafast Fabrication of Metal Nanostructures Using Pulsed Laser Melting

Cui¹

2011

Recent Advances in Nanofabrication Techniques and Applications

View full text Add to dashboard Cite

“…We assume a laser light is absorbed via inverse bremsstrahlung with the absorption coefficient of α, which is given by 27 α ¼ aZn 2 e , where a ¼ 6E − 37λ laser ðμmÞ 2 ∕T e ðeVÞ 3∕2 ðcmÞ 5 , λ laser is the laser wavelength, T e is the electron temperature, Z is the charge state of the plasma, and n e is the electron density.…”

Section: Radiation Efficiencymentioning

confidence: 99%

Tin laser-produced plasma as the light source for extreme ultraviolet lithography high-volume manufacturing: history, ideal plasma, present status, and prospects

Tomie

2012

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

Abstract. Today intermediate-focus equivalent extreme ultraviolet (EUV) power of several watts is now available, and EUV lithography scanners are being considered as potential scanners for high-volume manufacturing (HVM) tools. However, for high-volume manufacturing with throughput of over 100 wafers per hour, EUV power of 350 W may be required. We review the history of EUV sources for lithography with tin as fuel. We discuss the ideal plasma for tin sources for extreme ultraviolet lithography (EUVL), conditions for a high conversion efficiency of 4% to 5% in 2πsr, and the existence of a repetition rate limit at around 40 kHz. We review the present status reported by EUV source suppliers and the prospects of tin laserproduced plasma as an EUV source for HVM EUVL.

show abstract

“…There are many excellent reviews on the plasmas generated by the interaction of laser li ght with so lids: Radziemski and Cremers [110], Mo enke-Blankenburg [111], Adrain and Watso n [112], Fii rstenau [113], [114], Hughes [115], Krokhin [116], deMichelis [117], and Ready [118]- (120]. The mo st recent articles emphasize analytical applications of LPP, while the earlier revi ews co ncern high-density plasmas of interest in laser-induced fusion research.…”

Section: Laser-produced Plasmas (Lpp)mentioning

confidence: 99%