tert‐Butoxycarbonyl‐L‐Proline

Abstract

tert ‐Butoxycarbonyl‐ L ‐proline reactant: 115 g. (1.00 mole) of 1,1,3,3‐tetramethylguanidine product: tert ‐butoxycarbonyl‐ L ‐proline product: Boc‐Ala product: Boc‐Ala product: Boc‐Asn product: Boc‐Asp product: Boc‐Cys(Bzl) product: Boc‐Cys (Bzl) product: Boc‐Gln product: Boc‐Glu product: Boc‐Ile product: Boc‐Leu product: Boc‐Met product: Boc‐Phe product: Boc‐Phe product: Boc‐Phe product: Boc‐Phe product: Boc‐Phe product: Boc‐Pro product: Boc‐Pro product: Boc‐Pro product: Boc‐Thr product: Boc‐Val

Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

“…The mobility reduction in the SiON device is believed to be due to Remote Charge Scattering (RCS) from charges at the gate-dielectric interface [7]. The addition of 5 cycles of HfO 2 reduces the mobility further [8].…”

The Archaeology of Plural and Changing Identities

“…Both sites were located on what had been small islands in a lagoon along the coast of southern Scania during the Mesolithic occupations (Larsson 1980(Larsson , 1981(Larsson , 1982(Larsson , 1983(Larsson , 1984a(Larsson , 1984b(Larsson , 1988(Larsson , 1990a(Larsson , 1990b(Larsson , 1993. Both sites were located on what had been small islands in a lagoon along the coast of southern Scania during the Mesolithic occupations (Larsson 1980(Larsson , 1981(Larsson , 1982(Larsson , 1983(Larsson , 1984a(Larsson , 1984b(Larsson , 1988(Larsson , 1990a(Larsson , 1990b(Larsson , 1993.…”

High-per formance, highly reliable HfSiON gate dielectric for low Vth system LSI's

“…However, a major problem so-called Fermi-level pinning was reported that higher threshold voltage (V th ) was observed especially in pFET when polySi film was used as a gate electrode [3]. This phenomenon was originally explained by gap states induced by Hf-Si bonds at the interface and was shown to occur even after deposition of HfSiO submonolayer on SiO 2 [4,5]. Also, recent paper reported that oxygen vacancies generated in HfSiO layer could be the cause for the pinning [6].…”