I(V) computational conduction model for a SiC-6H Schottky diode

Benmaza, H.; Akkal, B.; Anani, M.; Abid, Hamza; Bensaad, Zouaoui; Bluet, Jean‐Marie

doi:10.1016/j.matchemphys.2008.05.037

Cited by 5 publications

(1 citation statement)

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“…However, these studies did not provide the detailed mechanisms governing current transport at different bias voltages. By considering various transport models for Pt/nGaN Schottky diodes, Suzue et [11]. However, previous studies have not been able to elucidate the mechanisms through which electrical current conduction occurs in metal/bulk ZnO Schottky contacts.…”

Section: Introductionmentioning

confidence: 99%

Electron Transport Mechanisms in Ag Schottky Contacts Fabricated on O-polar and Nonpolar m-plane Bulk ZnO

Kim¹

2015

Transactions on Electrical and Electronic Materials

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We prepared silver Schottky contacts to O-polar and nonpolar m-plane bulk ZnO wafers. Then, by considering various transport models, we performed a comparative analysis of the current transport properties of Ag/bulk ZnO Schottky diodes, which were measured at 300, 200, and 100 K. The fitting of the forward bias current-voltage (I-V) characteristics revealed that the tunneling current is dominant as the transport component in both the samples. Compared to thermionic emission (TE), a stronger contribution of tunneling current was observed at low temperature. The reverse bias I-V characteristics were well fitted with the thermionic field emission (TFE) in both the samples. The presence of acceptor-like adsorbates, such as O 2 and H 2 O, modulated the surface conductive state of ZnO, thereby affecting the tunneling effect. The degree of activation/passivation of acceptor-like adsorbates might be different in both the samples owing to their different surface morphologies and surface defects (e.g., oxygen vacancies).

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Section: Introductionmentioning

confidence: 99%