Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

Chaiyasena, I. A.; Lenahan, Patrick M.; Dunn, G.J.

doi:10.1063/1.104986

Cited by 38 publications

(12 citation statements)

References 14 publications

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“…The RNO material produced photocurrents similar to the control material with Ic,Jfco ranging from 0.8 to 1.0. These results are consistent with observations that the reoxidation of nitrided oxides diminishes the density of electron traps created in the nitridation process [4]. Wafer B10 had a BOX layer where the oxides on both the handle and seed wafers have been given a bond strength enhancing treatment and the effects of this treatment on Ic,JIco are also shown in this figure.…”

Section: A Photoconduction Current Measurementssupporting

confidence: 91%

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Radiation-induced charge effects in buried oxides with different processing treatments

Pennise

Boesch

Goetz³

et al. 1993

IEEE Trans. Nucl. Sci.

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We characterize the radiation-induced charge trapping and transport propehes of the buried-oxide (BOX) layer using the photocurrent response technique and capacitance-voltage shift measurements for a variety of silicon-on-insulator (SOI) materials. We observe dramatic differences as a result of different BOX processing conditions. The radiation response of the SO1 as a whole is shown to be consistent with the basic properties of the material(s) contained in the BOX layer. In comparison to standard separation by implantation of oxygen (SIMOX) material, SIMOX receiving a supplemental oxygen implant and lowtemperature anneal produces large normalized photocurrent values indicating that both radiation-generated charge carriers move through the BOX. Of the materials examined, the bond-andetch-back silicon-on-insulator (BESOI) material containing a silicon nitride layer produced the lowest normalized photocurrents, heavy trapping of both carriers. By comparison BESOI with thermal oxide layers traps neither carrier in the oxide bulk.The results of this study should be considered in the design of radiation-hardened components and when considering processing variations.In our previous work [2], we examined bond-and-etch-back silicon-on-insulator (BESOI) material from several different vendors. We recorded a range of values for the normalized currents, depending on the vendor, with Zc,,,/lco typically in the range 0.7 to 1.1. Using standard pre-and post-irradiation capacitancevoltage (C-V) measurements, laTge mid-gap voltage shifts, AVw, were also measured. These results led us to conclude that most of the radiation-generated charge carriers move through the BOX layer, but that a substantial fraction become trapped at one of the interfaces.Separation by implantation of oxygen (SIMOX) is the leading SO1 material for future radiation-hardened microelectronics. Much research has been performed on standard SIMOX material and we, along with many others, have shown that this material traps holes in the bulk oxide layer very heavily and that the electrons move large distances in the BOX]. Through the use of the photocurrent technique, measurements obtained on all SIMOX material examined to date yield values of Ic,,,/Zco = 0.55 k 0.05, consistent with this interpretation of the transport properties. Additionally, large AVq relative to dose are measured in this material, indicating a large fraction of hole trapping. INTRODUC~ION EXPERIMENTAL DETAILSThe photoconduction current technique is an important tool in the analysis of the charge-trapping and transport properties in the buried-oxide (BOX) layer of silicon-on-insulator (SOI) material. This method, developed in our earlier work [l], provides a way to determine the amount of radiation-generated charge moving through the BOX layer. The experiment measures the photocurrent,fcm, resulting from the motion of the x-raygenerated electrons and holes in the BOX. In our analysis,Icm is normalized U, a theoretic maximum value, Ice, yielding a fraction lc,JIco. Values of the fractional cur...

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Section: A Photoconduction Current Measurementssupporting

confidence: 91%

“…The lower fractional currents observed in these oxides are consistent with the fact that the nitridation process incorporates nitrogen and hydrogen into the oxide and results in the creation of electron traps; see Chaiyasena et al. [4], for example.…”

Section: A Photoconduction Current Measurementssupporting

confidence: 77%

Radiation-induced charge effects in buried oxides with different processing treatments

Pennise

Boesch

Goetz³

et al. 1993

IEEE Trans. Nucl. Sci.

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“…Amongst these defects, the paramagnetic defects "SiO Å also known as non-bridging oxygen hole center (NBOHC) [118,119] and "Si 2 N Å also known as R-center, appearing as a 1.9-2 eV photoluminescence (PL) peak in silicon oxide, is still significant in oxynitride [119][120][121]. Since the silicon atoms in these defects can be randomly coordinated by different number of oxygen and nitrogen atoms, i.e.…”

Section: Dielectric Trapsmentioning

confidence: 99%

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong

Iwai

2006

Microelectronic Engineering

355

184

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“…As it is known, the higher the D it values, the higher the amount of polarizing species at the interface participating in the relaxation process. These trapping centers could be associated with N atom dangling bonds located in the interfaces with the crystalline Si, as reported by Chaisena et al 22 The low chlorine content detected by RBS participates neither in the conduction nor the polarization processes found in the samples studied.…”

Section: Resultsmentioning

confidence: 61%

Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties

Vélez¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

Cited by 38 publications

References 14 publications

Radiation-induced charge effects in buried oxides with different processing treatments

Radiation-induced charge effects in buried oxides with different processing treatments

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Remote plasma chemical vapor deposition silicon oxynitride thin films: Dielectric properties

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