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We focus on radiation-induced interface traps, describing first how they fit into the overall radiation response of metal-oxide-semiconductor (MOS) structures. Detailed measurements of the time, field and temperature dependences of the build-up of radiation-induced interface traps indicate three processes by which the build-up occurs. The largest of these is the slow two-stage process described by McLean and co-workers, which is rate-limited by the hopping transport of hydrogen ions. Two other faster processes also contribute small interface trap build-ups in gate oxides. The processes seem to be controlled by hole transport to the Si/SiO, interface and by neutral hydrogen diffusion respectively. We also discuss several models which fall into three classes, corresponding roughly to the three processes observed experimentally. Other topics discussed briefly are dose dependence, field oxide effects, chemical and processing dependences and scaling effects.

This paper presents a conduction current technique to separate the effects of fractional charge yield and dose enhancement in metal-oxide semiconductor (MOS) devices in a 1O-keV x-ray environment. The results of the conduction current measurements, together with the concept of charge generation as the damage-producing agent, are used to correlate the threshold-voltage shifts in gate-and field-oxide MOS field-effect transistors irradiated with 60Co and a 10-keV x-ray machine. A straightforward procedure for calculating the equal6,gamage dose equivalence between the 1O-keV x-ray and Co sources is also presented. 1.