1986
DOI: 10.1109/tns.1986.4334599
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The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices

Abstract: This paper presents a conduction current technique to separate the effects of fractional charge yield and dose enhancement in metal-oxide semiconductor (MOS) devices in a 1O-keV x-ray environment. The results of the conduction current measurements, together with the concept of charge generation as the damage-producing agent, are used to correlate the threshold-voltage shifts in gate-and field-oxide MOS field-effect transistors irradiated with 60Co and a 10-keV x-ray machine. A straightforward procedure for cal… Show more

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Cited by 178 publications
(47 citation statements)
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“…The charge buildup process starts when an energetic photon (energy > 18 eVfor SiC^) [11]) creates an electron-hole pair (ehp) in the oxide. It is usually assumed that ehp generation is uniform throughout the oxide.…”
Section: Overviewmentioning
confidence: 99%
“…The charge buildup process starts when an energetic photon (energy > 18 eVfor SiC^) [11]) creates an electron-hole pair (ehp) in the oxide. It is usually assumed that ehp generation is uniform throughout the oxide.…”
Section: Overviewmentioning
confidence: 99%
“…The generation rate of electronhole pairs G(E) depends on the radiation dose intensityḊ = dD/dt, pairs generation coecient k g and the probability for the created electronhole pairs to be separated by the electric eld before recombination f X−ray y (E) [5,6]:…”
Section: The Modelmentioning
confidence: 99%
“…3b in [19]. We calculated the critical charge based on a SiO 2 electron-hole pair creation energy of 17 eV, which translates to 106 keV/fC [26,27]. The second volume (SV2, silicon) is derived from the 45 nm silicon on insulator (SOI) static random access memory (SRAM) data presented by D. F. Heidel, et al [12].…”
Section: Fig 3(b)mentioning
confidence: 99%