Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps

Abstract

Quantitative defect spectroscopy was performed on low gate leakage operational S-band GaN HEMTs before and after RF accelerated life testing (ALT) to investigate and quantify potential connections between the evolution of observed traps and RF output power loss in these HEMTs after stressing. Constant drain current deep level transient spectroscopy and deep level optical spectroscopy (CI D -DLTS and CI D -DLOS, respectively) were used to interrogate thermally-emitting traps (CI D -DLTS) and deeper optically-stimulated traps (CI D -DLOS) so that the entire bandgap can be probed systematically before and after ALT. Using drain-controlled CI D -DLTS/DLOS, with which traps in the drain access region are resolved, it is found that an increase in the concentration of a broad range of deep states between E C -1.6 to 3.0 eV, detected by CI D -DLOS, causes a persistent increase in on-resistance of 0.22 Ω-mm, which is a likely source for the 1.2 dB reduction in RF output power that was observed after stressing. In contrast, the combined effect of the upper bandgap states at E C -0.57 and E C -0.72 eV, observed by CI D -DLTS, is responsible for only~10% of the on-resistance increase. These results demonstrate the importance of discriminating between traps throughout the entire bandgap with regard to the relative roles of individual traps on degradation of GaN HEMTs after ALT.

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

“…These are attributed to defects in the InGaN QWs . The electron traps are similar to the E c −1 eV traps commonly found in n‐GaN and are likely related to nitrogen interstitial acceptors N I . The E v +0.75 eV hole traps have been attributed to the same defects that give rise to the main hole traps in n‐GaN near E v +0.9 eV responsible for the yellow luminescence band .…”

“…Moreover, if these traps are similar to the major E v +0.9 eV hole traps in n‐GaN , one would not expect them to effectively influence the recombination lifetime and this was demonstrated experimentally . The traps with optical threshold near 1.3 eV whose concentration increased after irradiation are similar to the centers often observed in n‐GaN and attributed to carbon interstitials . These centers are not likely to be major lifetime killers .…”