Identification of colloidal silica polishing induced contamination in silicon

Tweddle, David; Hamer, Phillip; Shen, Zhao; Moody, Michael P.; Wilshaw, Peter R.

doi:10.1016/j.matchar.2019.04.029

Cited by 4 publications

(1 citation statement)

References 36 publications

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“…Many researchers have studied the interaction between the polishing mixture and the workpiece surface [22,23]. In this study, the hydration reaction mechanisms on the workpiece surface were investigated.…”

Section: Hydration Reactionmentioning

confidence: 99%

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

Duc

Hieu

Quang

2022

Preprint

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The material yttrium aluminum oxide (Y3Al5O12) is one of the materials commonly used in laser devices. For application in optical devices, it is necessary to produce ultra-precise surface quality, however, Y3Al5O12 material belongs to the group of difficult-to-machine materials with high brittleness and hardness. Therefore, it is very difficult to ensure that the main criterion when finishing this material to produce a quality surface in the nanometer form with the ability to remove the material is very difficult. To solve this problem, this work provided a new chemical - mechanical polishing mixture. The proposed polishing mixture of ZrO2, Na2SiO3–5H2O, and MgO abrasives has a weight ratio of 8%, 5% and 1% respectively, with the remainder being deionized water. The surface result after polishing is obtained with a material removed rate of 38 (nm/min) along with an ultra-smooth surface produced with Ra = 0.41 nm. With the help of X-ray photoelectron spectroscopy (XPS) method before and after polishing by CMS, the reaction mechanisms were elucidated. Analytical results show that Y3Al5O12 material produces YOOH and AlOOH in Na2SiO3 solution, then combines with –Si–OH to form (Y-Si) and (Al-Si) with significantly reduced hardness compared to other Y3Al5O12 materials, these products combine with MgO to form montmorillonites (3MgO–Al2O3–3SiO2–3Y2O3–5Al2O3). With this formation, the surface layer of Y3Al5O12 material becomes soft and is easily removed by ZrO2 abrasive particles under the influence of mechanical polishing, resulting in superfine surfaces are generated from the proposed CMS model.

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Section: Hydration Reactionmentioning

confidence: 99%

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

Duc

Hieu

Quang

2022

Preprint

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Radiation defects as probes for the copper and nickel contamination during the chemomechanical polishing of Si wafers

Yarykin,

Weber

2024

Materials Science in Semiconductor Processing

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Understanding and optimizing EBIC pn-junction characterization from modeling insights

Zhou

Tweddle

et al. 2020

Journal of Applied Physics

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In this paper, the physical mechanisms involved in electron-beam-induced current (EBIC) imaging of semiconductor pn-junctions are reviewed to propose a model and optimize the acquisition of experimental data. Insights are drawn on the dependence of the EBIC signal with electron accelerating voltage and surface conditions. It is concluded that improvements in the resolution of EBIC are possible when the surface conditions of the specimens are carefully considered and optimized. A lower accelerating voltage and an increase of the surface recombination velocities are quantitatively shown to maximize the EBIC lateral resolution in locating the pn-junction. The effect of surface band bending is included in the model, and it is seen to primarily affect the surface recombination. Introducing controlled surface damage is shown as a potential method for resolution enhancement via focused ion beam milling with Ga+ ions. These findings contribute to the understanding of this technique and can produce further improvements to its application in semiconductor device technology.

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Identification of colloidal silica polishing induced contamination in silicon

Cited by 4 publications

References 36 publications

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

Radiation defects as probes for the copper and nickel contamination during the chemomechanical polishing of Si wafers

Understanding and optimizing EBIC pn-junction characterization from modeling insights

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