Identification of defect levels in CdTe/CdS solar cells using deep level transient spectroscopy

Komin, V.; Viswanathan, V.; Tetali, B.; Morel, D.L.; Ferekides, C.S.

doi:10.1109/pvsc.2002.1190670

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…Signal quality in other devices with 0.3% and 1 % Cu is not sufficiently good to allow reliable extraction of an activation energy, although the same signature for the deep level are also observed near the maximum temperature end of the measurement. We note that although defect levels deeper than 0.5 eV above the valence band edge of CdTe have been observed in various studies [5], [17]- [20], they have not been positively attributed to Cu incorporation. Data is from the device from the 5% Cu target.…”

Section: Bulk Cdte Propertiesmentioning

confidence: 49%

Electrical characterization of Cu composition effects in CdS/CdTe thin-film solar cells with a ZnTe:Cu back contact

Duenow

Kuciauskas

et al. 2012

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

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We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current densit y increases. For the bulk CdTe, the hole densit y increases with Cu concentration. We identif y a Cu-related deep level at -0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially improves with Cu concentration then decreases, reflects the interpla y between the positive influences (reducing the back contact potential barrier while increasing the saturation current densit y of the back contact and hole densit y in CdTe bulk) and negative influences (increasing deep levels in CdTe) of Cu.

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Section: Bulk Cdte Propertiesmentioning

confidence: 49%