Identification of shallow Al donors in Al-doped ZnO nanocrystals: EPR and ENDOR spectroscopy

Electrical detection of electron spin resonance in microcrystalline silicon pin solar cells

“…To the best of our knowledge, no ESR or EDMR signals caused by paramagnetic states at g sd = 1.9675(5) have been reported for either a-Si:H or µc-Si:H. However, resonances at similar g values were obtained from shallow donors in ZnO [37,38]. Here, the observed g value critically depends on the morphology (crystallite size) of the respective ZnO material.…”

Defect properties of ZnO nanowires

“…MR studies were also extended [16,17] to epitaxial films, which were grown under non-equilibrium conditions by molecular beam epitaxy (MBE). MR studies of defects in nano-crystalline ZnO were so far mainly devoted to shallow donors [18,19]. This was partly related to a limited sensitivity of traditional MR methods, such as electron spin resonance (ESR), which are often found to be inadequate for investigations of nanostructures due to their small volume and, therefore, a low total number of defects.…”

EPR and ODMR defect control in AlN bulk crystals

“…Models proposed for the defect responsible for such interaction are contradictory: (i) displaced Al atom [7] (ii) nitrogen vacancy [6][7][8] or (iii) neutral oxygen substituting for nitrogen [8]. However oxygen could be excluded from this list on the basis of the high-frequency EPR and ENDOR studies [9] where it was shown that oxygen is a shallow donor in AlN that undergoes the DX behavior. For the purpose of further discussion we will assume that these signals belong to the nitrogen vacancy and in what follows we will show that the displaced Al atom can be also ruled out.…”