Efficient transport of exciton in 2D semiconductors is
of great
importance for developing high-speed optoelectronic devices. However,
excitons in layered transition-metal dichalcogenides, a class of 2D
semiconductors, can only transport over a few hundred nanometers,
due to the multiple collision with phonons and disorders. Here, we
boost the transport capability of excitons in layered tungsten disulfide
(WSe2) by engineering its photonic environment. Extended
polaritonic states are formed between the flying interfacial photons
and the tightly bounded excitons, with the Rabi splitting scaling
with the square root of the layer number of WSe2. The light-mass
polariton can travel several or even tens of micrometers, with its
lifetime down to a femtosecond scale. Therefore, these results provide
a unique route for designing high-speed polaritonic devices based
on 2D semiconductors.