Monolayer transition metal dichalcogenides possess considerable second-order nonlinear coefficients but a limited efficiency of frequency conversion due to the short interaction length with light under the typical direct illumination. Here, we demonstrate an efficient frequency mixing of the guided surface waves on a monolayer tungsten disulfide (WS 2 ) by simultaneously lifting the temporal and spatial overlap of the guided wave and the nonlinear crystal. Three orders-of-magnitude enhancement of the conversion efficiency was achieved in the counter-propagating excitation configuration. Also, the frequency-mixing signals are highly collimated, with the emission direction and polarization controlled, respectively, by the pump frequencies and the rotation angle of WS 2 relative to the propagation direction of the guided waves. These results indicate that the rules of nonlinear frequency conversion are applicable even when the crystal is scaled down to the ultimate single-layer limit. This study provides a versatile platform to enhance the nonlinear optical response of 2D materials and favor the scalable generation of a coherent light source and entangled photon pairs.
to the photon-assisted oxygen desorption from the nanostructure surface, resulting in a decrease of hole concentration. [2] Also, in the case of n-type InAs nanowires, the hot carrier trapping process at the surface gives the reduction of photoexcited charge carriers. [3] Therefore, additional electronic states are always required to compensate photoexcited charge carriers for accessing NPC situation. Nanostructured materials with plenteous surface sites can potentially generate a high density of localized energy states to trap photoexcited charge carriers, which are promising for constructing optoelectronic devices with high-speed frequency response and low power consumption. [3,4] 2D materials have proved to be one of the most promising materials of which the focus has expanded beyond graphene to other layered van der Waals materials with a variety of distinct properties. [5][6][7][8][9][10] A burgeoning research direction goes toward the newly emerged metal phosphorus trichalcogenides (MPTs). [11][12][13][14] MPTs have many fascinating properties as featured in photoelectronic and electronic fields, such as a wide range of indirect bandgap from 1.3 to 3.5 eV, [11] and high carrier mobility. [15] In addition, the introduction of magnetic metal atoms can bring new physical phases, such as antiferromagnetic or ferromagnetic order. [16,17] With these advantages, some works have demon strated that MPTs obtain a remarkable photo response under ultraviolet (UV) illumination 2D materials have aroused tremendous attention in the last decade, and magnetic materials of the 2D scale are rising to prominence in recent years, which may revolutionize current optical and electronic applications. Photoconductivity is a well-known optical and electrical property, which should be positive as the conductivity of material increases typically upon the absorption of electromagnetic radiation. Here, a controllable switch from negative to positive photoconductivity effect of FePS 3 nanosheets is enabled by the modulation of the excitation wavelengths. These effects originate from an ultrafast process of hot carrier trapping, as visualized and investigated by the transient absorption microscopy at a quantitative level. This hot carrier trapping process is about 1.25 ps resulting in a lower diffusion constant state (≈3.5 cm 2 s −1 ), which provides deep insight into the intrinsic properties of 2D FePS 3 for further study. The results demonstrate experimentally the possibility to tune the electronic properties of 2D magnetic materials by an optical way, which not only induces the change in the magnitude but also in the sign, leading to more understandings and possibilities in 2D optoelectronic devices with many unexpected and multifunctional properties.
Stacking atomically thin films enables artificial construction of van der Waals heterostructures with exotic functionalities such as superconductivity, the quantum Hall effect, and engineered light-matter interactions. In particular, heterobilayers composed of monolayer transition metal dichalcogenides have attracted significant interest due to their controllable interlayer coupling and trapped valley excitons in moiré superlattices. However, the identification of twist-angle-modulated optical transitions in heterobilayers is sometimes controversial since both momentum-direct (K-K) and -indirect excitons reside on the low energy side of the bright exciton in the monolayer constituents. Here, we attribute the optical transition at approximately 1.35 eV in the WS2/WSe2 heterobilayer to an indirect Γ-K transition based on a systematic analysis and comparison of experimental PL spectra with theoretical calculations. The exciton wavefunction obtained by the state-of-the-art GW-Bethe-Salpeter equation (GW-BSE) approach indicates that both the electron and hole of the exciton are contributed by the WS2 layer. Polarization-resolved k-space imaging further confirms that the transition dipole moment of this optical transition is dominantly in-plane and is independent of the twist angle. The calculated absorption spectrum predicts that the usually called interlayer exciton peak coming from the K-K transition is located at 1.06 eV, but with a much weaker amplitude. Our work provides new insights into understanding the steady-state and dynamic properties of twist-angle-dependent excitons in van der Waals heterostructures.
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