III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers

Abstract

Significant developments have occurred in the area of III-V compound semiconductor nanostructures. The scope of developments includes quantum dots and nanowires epitaxially grown on Si substrates, as well as their applications in light emitting diodes and lasers. Such nanoscale heterostructures exhibit remarkable structural, electrical, and optical properties. The highly effective lateral stress relaxation, due to the presence of facet edges and free surfaces, enables the achievement of nearly defect-free III-V nanoscale heterostructures directly on Si, in spite of the large lattice mismatches and the surface incompatibility. With the incorporation of multiple quantum dot layers as highly effective three-dimensional dislocation filters, self-organized quantum dot lasers monolithically grown on Si exhibit, for the first time, relatively low threshold current (J th = 900 A/cm 2) and very high temperature stability (T 0 = 244 K). III-V semiconductor nanowire light emitting diodes on Si, with emission wavelengths from UV to near-infrared, have also been demonstrated.

Opto-electronic characterizations of oriented nano-structure CdSe film/Si (001) heterostructure

“…As recognized long ago [13], (0 0 1)-oriented Si substrates reduced the formation of antiphase domains and stacking faults at the epitaxial layer and Si misfit interfaces. However, the presence of a high density of structural defects associated with the large differences in lattice constants and thermal expansion coefficients between epitaxial layer and Si exhibiting extremely short lifetime and poor characteristics of the resulting devices [12][13][14][15][16]. In addition, as the continuing miniaturization of the advanced semiconductor devices is going into nano world, this obviously will enhance the influence of lattice defects on their optoelectronic properties of the devices.…”

One‐Dimensional Metal‐Oxide Nanostructures: Recent Developments in Synthesis, Characterization, and Applications

“…Sputtering78 and laser ablation79 techniques can be used to synthesize colossal 1D metal‐oxide nanostructures. However, the molecular beam epitaxial technique80, 81 is mostly used to synthesize 1D nanostructures of III‐V compounds, not metal‐oxides. The PVD techniques mainly involve vapor‐solid growth without metallic catalysts.…”

First-principles study of size-, surface- and mechanical strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires

“…They are expected to play important roles as functional components in future nanoscale field effect transistors [1], high efficiency photo detectors [2,3], light emitting diodes [4], photovoltaic cells [5], medicine sensors [6], phonon devices [7][8][9][10], etc. Among the family of III-V semiconductors, bulk InSb has the smallest direct band-gap (0.17 eV), the highest electron mobility (≈ 7.7 × 10 4 cm 2 /Vs) in part due to the small electron mass (0.015m e ).…”