III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

“…[0001], , [11][12][13][14][15][16][17][18][19][20], and . In contrast to GaN regrowth, poor selectivity was observed during InGaN deposition, as InGaN growth can be seen on the SiN x surface in Figs.…”

“…These reasons provide a strong motivation for investigating their growth by the commercially preferred metalorganic vapor phase epitaxy (MOVPE) method. Such NRs can be grown using either a bottom-up approach using selective area epitaxy [8][9][10][11][12][13][14] or a top-down approach 15,16 in which NRs with controlled aspect ratio are etched from a planar film before the regrowth of GaN/InGaN shell layers over the NRs. 4,16,17 Irrespective of their method of formation, there is substantial evidence that GaN NRs are strain-free once their height exceeds their diameter.…”

Population dynamics and dephasing of excitons and electron-hole pairs in polytype wurtzite/zinc-blende InP nanowires

“…Different synthetic approaches have been developed to fabricate NWs including the vapor-liquid-solid (VLS) growth [5][6][7] , solution-liquid-solid (SLS) growth 8 and template based methods [9][10][11] . Due to the small radial dimensions of the NWs the design of NW heterostructures is not limited by strain as in conventional planar molecular beam epitaxy (MBE) or metal-organic-vapor-phase-epitaxy (MOVPE) thus enabling the fabrication of a wide variety of radial heterostructures as e.g.…”

Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

“…A growth mask of either SiNx or SiOx is commonly used in catalyst-free selective area NW growth [32,33], and in self-catalyzed NW growth [34,35]. A growth mask has been successfully used for metal-catalyzed Si microwires [36,37] and III-V NW growth [38][39][40].…”