Illumination condition and mask bias for 0.15-μm pattern with KrF and ArF lithography

Abstract

ABSTRECTIn this paper the optimization of illumination condition and mask bias in semiconductor lithography is reported, in the case of using half-tone mask (HTM) and off-axis illumination (OAT). Its results are to control the line width and to enlarge the common process margin for both isolated and dense 0. 18tm-O. 15 itm pattern with KrF and ArF lithography. It found that for 0. 1 8im pattern KrF needs every resolution enhancement technology (RET), for example, HTM, OAI and iso/dense optical proximity correction (OPC). For 0. 15im pattern KrF needs more than O.65NA additionally. On the other hand ArF needs less than O.55NA.