A suitable silane coupling agent (SCA) structure to improve the water absorption and mechanical strength of silica particlefilled epoxy resin was investigated. Bonding, hydrocarbon, and fluorocarbon type SCAs were employed. The bonding type has glycidoxy or amino groups that react with epoxy resin, whereas the other types have only hydrophobic chains. The spherical silica particles were added to epoxy resin at amounts from 10 to 50 wt %. The effect of water absorption was consequently lowered in the order of hydrocarbon > bonding types. The fluorocarbon type SCA was also effective at zero and low silica content. Modification of the epoxy phase by SCA addition was clarified to have a more dominant effect than the adhesion of silica/epoxy interface for the lowering of water absorption, whereas it had been conventionally considered that interfacial adhesion had a more dominant effect. The mechanical strength was higher for the bonding type than the other type. Two addition methods were compared, a pretreatment method and an integral blend method in which all components were mixed simultaneously. The integral blend method was determined to be superior to the pretreatment method for both water absorption and mechanical strength, which was also contrary to the conventional view.

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A new cell structure named ACT (Asymmetrical Contactless Transistor) is proposed for high density data storage applications which require low voltage, low power consumption and fast prograderase.The ACT cell with a lightly doped source and heavily doped drain realizes a simple virtual ground array using the Fowler-Nordheim (FN) tunneling mechanism for both program and erase. A selfaligned floating-gate wing technology is introduced to increase gate coupling ratio in wordline direction without sacrificing cell area. A cell area as small as 0 . 3 9~" with a coupling ratio of 0.55 is obtained using 0.3pm process technology.The low programming current of the ACT cell enables multiple programming to be used and thus it is possible to achieve fast programming (< lyshyte) with a low single supply voltage (< 3V). A good disturb immunity in program, erase and read modes is also obtained.

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This paper describes a novel i-line lithography by chase-shifting Qn the ubstrate (POST). With POST, O.2tm resist patterns have been achieved by using an i-line stepper and conventional masks without phase shifters.It was confirmed that fine patterns were formed by the phase-shifting effect in the resist on the substrate. Simulation suggests that POST has a better resolution than a phase-shifting mask.This method consists of simple processes and is expected to be useful in the fabrication of deep-submicron patterns for ULSI. 626 / SPIE Vol. 1674 Optical/Laser Microlithography V (1992) 0-81 94-0829-8/92/$4.0O Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/27/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx SPIE Vol. 1674 Optical/Laser Microlithography V(1992) / 627 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/27/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx