Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node

Nakano, Hiroyuki; Oguni, Kumiko; Nohdo, Shinichiro; Koike, K.; Moriya, Shinji

doi:10.1117/12.476996

SPIE Proceedings

2002

DOI: 10.1117/12.476996

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Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node

Hiroyuki Nakano

Kumiko Oguni

Shinichiro Nohdo

et al.

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Complementary masking approach for proximity electron lithography

Omori¹,

Iwase²,

Amai³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Approach to full-chip simulation and correction of stencil mask distortion for proximity electron lithographyWe have devised a new mask format for low-energy electron-beam proximity-projection lithography ͑LEEPL͒ that enables faster and more accurate image transfer from the mask to a wafer, in comparison with the single-membrane mask as originally proposed. Simultaneous exposure over four adjacent complementary quadrants of the mask, synchronized with step-and-repeat motion of the wafer stage, yields one complete pattern with the throughput of ϳ30 wafers/h. Mechanical analysis has demonstrated that the new format also offers better controllability of image placement owing to smaller membranes, even though the gravitational deformation of the mask, for example, must still be corrected for.

show abstract

Complementary masking approach for proximity electron lithography

Omori¹,

Iwase²,

Amai³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

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Imaging capability of low-energy electron-beam proximity projection lithography toward the 70-nm node

Cited by 1 publication

References 0 publications

Complementary masking approach for proximity electron lithography

Complementary masking approach for proximity electron lithography

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