Imaging elastic strains in high-angle annular dark field scanning transmission electron microscopy

Perovic, D. D.; Rossouw, C. J.; Howie, A.

doi:10.1016/0304-3991(93)90046-z

Cited by 151 publications

(78 citation statements)

References 15 publications

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“…14) These images reveal the existence of the core shell structure, exhibiting bright contrast. The results indicate in the inner area and dark contrast in outer area as compared with the atomic number (considering the atomic number Al 13 , O 8 and Ir 77 ). Thereby, structure of nanocrystals can be explained as follows.…”

Section: Resultsmentioning

confidence: 95%

“…In HAADF STEM image, the contrast is given by the sum of the intensity of thermal diffuse scattering (TDS), so that each atom ejects TDS electrons and the cross section for TDS is different among atom species. 13) As a result, the intensity in HAADF STEM image depends on the atomic number and the concentration of atoms in the specimen. 14) These images reveal the existence of the core shell structure, exhibiting bright contrast.…”

Section: Resultsmentioning

confidence: 99%

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Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device

Banerjee

Maikap

et al. 2011

Mater. Trans.

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The aim of this work is to investigate the particle size and morphology of the nanocrystals in the non-volatile memory device by annular dark field (ADF) scanning transmission electron microscopy (STEM) and conventional transmission electron microscopy (CTEM) techniques. With respect to TEM investigation, statistical analysis on STEM image can acquire the size and density of nanocrystals more accurately than on TEM image. In addition, ADF STEM images successfully provide powerful evidences revealing the structure of IrO x nanocrystals as a core shell structure, where the inner structure is rich in Ir and the outer area is abundant in O or Al. This method could be one of the efficient way for examining the nanocrystals with a complicated cored structure.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device

Banerjee

Maikap

et al. 2011

Mater. Trans.

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“…Combined with electron energy loss spectroscopy ͑EELS͒, ADF-STEM imaging has become a widely used technique for crystallographic and chemical analyses at atomic resolution. 7 The contrast of an ADF-STEM image has also been shown to depend on strain arising from point defects and dislocations, 8 or local lattice distortion at interfaces such as Si/ SiO 2 . 9 However, little work has been reported on the strain contrast in ADF-STEM imaging of heteroepitaxial strained layers.…”

Section: Introductionmentioning

confidence: 99%

Composition and strain contrast of Si1−xGex (x=0.20) and Si1−yCy (y≤0.015) epitaxial strained films on (100) Si in annular dark field images

Baribeau

2009

Journal of Applied Physics

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/npsi/ctrl?action=rtdoc&an=12441077&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12441077&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions?Contact the NRC Publications Archive team at PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1063/1.3082019 Physics, 105, 4, pp. 043517-043517, 2009 Composition and strain contrast of Si 1−x Ge x "x = 0.20… and Si 1−y C y "y Յ 0.015… epitaxial strained films on "100… Si in annular dark field images The annular dark field ͑ADF͒ image contrast of Si 1−x Ge x ͑x = 0.20͒ and Si 1−y C y ͑y Յ 0.015͒ strained epitaxial films on ͑100͒ Si is investigated in a 200 kV scanning transmission electron microscope ͑STEM͒ with ADF detector inner semiangles ranging from 26 to 92 mrad. For the Si 1−x Ge x / Si system, the contrast increases with increasing ADF detector semiangle and decreases with increasing thickness to remain almost constant after the TEM sample thickness reaches 120 nm. The opposite trend is seen in the Si 1−y C y / Si system, where the contrast increases with increasing sample thickness and decreases with increasing ADF detector semiangle, and remains almost constant after the sample thickness exceeds 200 nm. In the dilute Si 1−y C y / Si system the lower average atomic number strained Si 1−y C y layers are brighter than the higher average atomic number Si for an ADF detector semiangle of up to 92 mrad when the sample thickness is greater than 200 nm. This anomalous contrast dependence is also observed for an ADF detector semiangle of up to 50 mrad in thinner TEM samples. The observed ADF-STEM image contrast is explained in relation to the atomic scattering and multislice simulations. The normalized intensity line scan profiles of ADF-STEM images coincide with the composition profiles determined from analytical TEM techniques: energy dispersive x-ray spectroscopy and electron energy loss spectroscopy, as well as secondary ion mass spectrometry. Journal of Applied

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“…The presence of thermal diffuse scattering (TDS) and multiple scattering make the quantitative interpretation of the contrast difficult. Resonant phonon modes can occur close to twin boundaries and enhance TDS [23], and localized static strain can give rise to HAADF contrast similar to that arising from variations in composition or thickness [24] showed that ADF images of B-doped silicon can exhibit opposite contrast to that expected as a result of scattering from displaced atoms surrounding impurity atoms. Elastic contrast can be preserved also in HAADF images as a result of channelling along planar or axial directions in crystals.…”

Section: Discussionmentioning

confidence: 93%

Three-dimensional characterization of stress corrosion cracks

Lozano-Pérez

Rodrigo

Gontard

2011

Journal of Nuclear Materials

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Imaging elastic strains in high-angle annular dark field scanning transmission electron microscopy

Cited by 151 publications

References 15 publications

Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device

Particle Size and Morphology of Iridium Oxide Nanocrystals in Non-Volatile Memory Device

Composition and strain contrast of Si1−xGex (x=0.20) and Si1−yCy (y≤0.015) epitaxial strained films on (100) Si in annular dark field images

Three-dimensional characterization of stress corrosion cracks

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