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CoSi 2 clusters on a Si(100) surface grow in a square shape at first, but at a critical size a shape transition to clusters with large aspect ratios occurs. Each cluster is connected to an implanted layer of cobalt by a thermally induced defect that serves as a diffusion channel. In this novel growth mode the existing clusters can grow with a continuous supply of cobalt while cluster-cluster interaction is prevented from becoming a dominant factor to the cluster shape as a result of the large distance between defects. Our data are in good agreement with calculations on the balance between surface and interfacial energies on the one hand and stress relaxation due to an elastic distortion of the substrate on the other.[S0031-9007(98)05917-1]

Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission scanning electron microscopy (FE-SEM). Cross-sectional FE-SEM images of boron-doped silicon heterostructures have been compared with atomic concentration and free carrier profiles measured by secondary-ion mass spectroscopy and electrochemical capacitance-voltage profiling, respectively. FE-SEM image contrast due to dopants has been shown to be electronic in origin. Since electrically active dopant species contribute solely to SE image contrast, FE-SEM can be effectively used to map electrically active dopant profiles in two dimensions with a sensitivity as low as 1016 cm−3.

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