Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

Hildner, M.L.; Phaneuf, R. J.; Williams, Ellen D.

doi:10.1063/1.121635

Cited by 15 publications

(23 citation statements)

References 17 publications

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“…The sample fabrication techniques have been described previously. 2,6 Data were acquired using a commercial PEEM instrument. 1,5 A chevron-type multichannel plate is used to intensify the images roughly 1 000 000 times.…”

Section: Methodsmentioning

confidence: 99%

Model for doping-induced contrast in photoelectron emission microscopy

Ballarotto

Siegrist

Phaneuf

et al. 2002

Journal of Applied Physics

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Articles you may be interested inElectrical transport properties of boron-doped single-walled carbon nanotubes J. Appl. Phys. 113, 054313 (2013); 10.1063/1.4790505 Valence band structure in boron-zinc oxide films characterized by secondary electron emission J. Appl. Phys. 111, 053302 (2012); 10.1063/1.3689848Resonant field emission from two-dimensional density of state on hydrogen-terminated intrinsic diamond We present a model that describes doping-induced contrast in photoelectron emission microscopy by including the effect of surface state distributions and doping-induced band gap reduction. To quantify the contrast, the photoyield from the valence band for near-threshold photoemission is calculated as a function of p-type doping concentration in Si͑001͒. Various surface state distributions appropriate for a native-oxide covered Si device are investigated in order to determine the effect on doping-induced contrast. The lower limit on the number of surface states necessary for doping-induced contrast to occur is approximately 5ϫ10 13 cm Ϫ3 . An interesting result is that neither the position nor the energy distribution of the surface donor states affects the contrast, which corresponds to approximately a factor of 2 change in intensity for each decade change in doping density. However, the overall intensity increases with any one of: increased surface state density, narrowing of surface state distribution, or increased energy of surface states with respect to the valence band. The band bending profile generated by the model predicts that doping-induced contrast will be affected by varying the incident photon energy. Experimentally, we verify this prediction by imaging with photon energies between 4.5 and 5.2 eV.

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Section: Methodsmentioning

confidence: 99%

Model for doping-induced contrast in photoelectron emission microscopy

Ballarotto

Siegrist

Phaneuf

et al. 2002

Journal of Applied Physics

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“…Since the devices become smaller and more complicated, the demand is largely increasing for development of profiling techniques to evaluate the electric properties with high spatial resolution. One of such techniques is scanning tunneling microscopy and spectroscopy ͑STM/STS͒ which has been applied to the study concerning Si, [1][2][3][4][5] GaAs, and related heterostructures [6][7][8][9][10] in order to characterize their local electric and electronic characteristics, such as the carrier type, 2-7 the band edge structure, [8][9][10] and the potential profile. 1,8 As for SiGe related structures which have been introduced into MOSFETs very recently, there are only a few papers on such characterization.…”

Section: Introductionmentioning

confidence: 99%

Surface treatments of SiGe for scanning tunneling microscopy/spectroscopy and characterization of SiGe p-n junction

Okui¹,

Tanaka²,

Shiraki³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Hydrogen-termination of SiGe(001) surfaces for scanning tunneling microscopy/spectroscopy (STM/STS) measurements was realized by optimizing the chemical treatment. It was found that the chemical oxidation with H2SO4 made the SiO2∕SiGe interface smooth and that the resultant hydrogen-terminated surface treated in the HF+HCl solution had few surface states in the band gap. This surface enabled the authors to evaluate the electrical properties of SiGe by STM/STS. Using the chemical method developed here, STM images of SiGe p-n junctions clearly visualized the existence of the depletion region. Furthermore, the distribution of the local electric properties of SiGe p-n junctions could be revealed with the spatial resolution better than 5×5nm2. It is concluded that STM/STS is a powerful technique to evaluate the local properties of Si∕SiGe devices.

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“…It was found in an earlier attempt that the imaging of the depletion region in a Si pn junction is difficult with scanning tunneling microscopy, due to ͑i͒ the Fermi-level pinning caused by the large density of surface states in the band gap of Si͑100͒ and Si͑111͒ and ͑ii͒ the inevitable tipinduced field effect in its tunneling condition. 4 Kelvin probe force microscopy ͑KPFM͒ has been used to image the contact potential difference ͑CPD͒ between probes and samples without the tip-induced field effect. 5 The mobile charge in a SiO 2 layer was mapped by electrostatic force microscope ͑EFM͒ on top of a pn junction and a field-effect transistor.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

Buh

Chung

et al. 2001

Journal of Applied Physics

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Electrical characterization of an operating pn-junction diode is performed with scanning capacitance microscopy ͑SCM͒ and Kelvin probe force microscopy ͑KPFM͒ with submicron scale resolution. We image the spatial distribution of the carrier density inside a diode with SCM and the potential distribution on the surface of the operating diode with KPFM. The surface potential distribution measured at reverse bias is different from that in bulk. The potential drop is extended deep into a lightly p-doped region at reverse bias. The positive fixed oxide charge of 1 -2ϫ10 11 /cm 2 would explain the modified potential drop: A known detrimental effect in such a device. The potential distribution at forward bias is nearly bulklike. The potential drops only near the metalsemiconductor junction.

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Imaging the depletion zone in a Si lateral pn junction with scanning tunneling microscopy

Abstract: Articles you may be interested inStudying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

Cited by 15 publications

References 17 publications

Model for doping-induced contrast in photoelectron emission microscopy

Model for doping-induced contrast in photoelectron emission microscopy

Surface treatments of SiGe for scanning tunneling microscopy/spectroscopy and characterization of SiGe p-n junction

Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

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