The carrier mobilities of all the listed materials are experimental results except for those of SnSe, MoO 3 , MoSSe, WSSe, and graphdiyne that are theoretical calculated values; b) The n, k values for all the listed materials are at 1550 nm except for BP at 800 nm and h-BN at 1200 nm; c) The NLO parameters of PdSe 2 , PtSe 2 , BP, h-BN, MoO 3 , and CsPbBr 3 are at 800 nm. Those of MoS 2 and Bi 2 Te 3 are at 1060 nm. Those of other materials are at 1550 nm. In addition to third-order optical nonlinearity, strong second-order optical nonlinearity has been observed for graphene, GO, MoS 2 , WSe 2 , PdSe 2 , and h-BN, with typical χ (2) values varying from 10 -12 -10 -7 m V -1 . [33,[116][117][118][119][120] ; d) The values of n 2 and β are dependent on the film thickness, here we only provide typical values obtained from experimental measurements.