Impact Ionization Coefficients in 4H-SiC

Loh, W.S.; Ng, B. K.; Ng, Jo Shien; Soloviev, Stanislav I.; Cha, Ho-Young; Sandvik, Peter; Johnson, C.M.; David, J.P.R.

doi:10.1109/ted.2008.926679

Cited by 81 publications

(56 citation statements)

References 18 publications

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“…The very good agreement between the experimentally determined multiplication and theoretically calculated multiplication using a local model suggests that the carriers can be assumed to be in thermal equilibrium with the electric field in even the thinnest structures considered here. A comparison of the impact ionization coefficients as a function of inverse electric field between AlInP, GaAs [8], GaInP [10], 4H-SiC [17], and GaN [18] is shown in Fig. 3.…”

Section: Experimental Detail Results and Discussionmentioning

confidence: 99%

Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

Ong

Krysa

et al. 2011

IEEE Electron Device Lett.

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Electron and hole multiplication characteristics have been measured on a series of Al 0.52 In 0.48 P p + -i-n + and n + -i-p + homojunction diodes with nominal avalanche region thicknesses ranging from 0.22 to 1.03 µm. From these, the electron and hole impact ionization coefficients are deduced over an electric-field range from 530 to 990 kV/cm. The results suggest that the electron ionization coefficient is larger than the hole ionization coefficient, particularly at lower electric fields. Extremely low dark currents were obtained, and there was no evidence of any tunneling dark current even at electric fields of approximately 1.0 MV/cm. From these ionization coefficients, we deduce that the breakdown voltage in Al 0.52 In 0.48 P is almost 2.5× greater than that of GaAs and 4.5× lower than that of GaN.

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Section: Experimental Detail Results and Discussionmentioning

confidence: 99%

Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

Ong

Krysa

et al. 2011

IEEE Electron Device Lett.

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“…A one dimensional double drift IMPATT diode has been shown in figure 1. The simulation methods start with the DC analysis by taking the recent experimental parameters like ionization rate, drift velocity, mobility and the permittivity of both the materials 4H-SiC and 6H-SiC [3][4][5][6][7].Since two materials has different ban-gap so the material parameters is also different for both the materials. Two advanced level computer programs involving double iterations have been framed to solve the device equations with usual boundary conditions [8].…”

Section: Computer Methods and Simulationmentioning

confidence: 99%

MM-wave characteristics of SiC-based IMPATT oscillators

Tripathy¹,

Mishra

Pati

2009

2009 Applied Electromagnetics Conference (AEMC)

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Wide band gap semiconductor SiC with their superior electrical properties are likely candidates to replace conventional low band gap materials like Si and GaAs in the near future for RF power applications.The authors have therefore studied this prospects through advanced computer simulation experiment on hexagonal (both 4H and 6H) SiC based double drift region IMPATT diodes. The study indicates that around 300GHz, 4H-SiC based Impatt devices is capable of generating high microwave power with efficiency as compared to 6H-SiC based IMPATT diodes for the same frequency of operation.

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“…where E is the electrical field (V/cm), A i is the amplitude parameter (cm -1 ), b i is the ionization energy parameter related to the mean free path between collisions (V/cm), and m i is an additional fit parameter [6]. These parameter values depend on the material and whether electrons or holes are being considered.…”

Section: Calculation Of the Lightly Doped N -Drift Region Width W Minmentioning

confidence: 99%

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

Gachovska¹,

Hudgins²

2014

ECS Trans.

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Obtaining a high coefficient of efficiency for a power converter requires that the components used to build it are well chosen. Power semiconductor switches are responsible for significant power loss. For the same breakdown voltage, a silicon carbide (SiC) bipolar device has a significantly thinner, lightly doped drift region (n- base) compared to silicon (Si) devices and, therefore, low switching losses and low voltage drops in the drift region. The forward voltage drop of a bipolar device is the sum of the drift region voltage drop and the junction voltages. The junction voltages of a Si device are significantly smaller as compared to a SiC device since its band gap is smaller. Therefore, for lower voltage devices (< 6.5 kV), the forward voltage drop will be smaller for Si as compared to SiC devices. For high voltage devices, the opposite is true. In this work, physics-based models of Si and SiC diodes were used to calculate the forward voltage drop for different breakdown voltages; and the simulation results are compared to determine the difference between Si and SiC devices.

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Impact Ionization Coefficients in 4H-SiC

Cited by 81 publications

References 18 publications

Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

MM-wave characteristics of SiC-based IMPATT oscillators

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

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