Impact-Ionization-Induced Bandwidth-Enhancement of a Si–SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz

Shi, J.-W.; Wu, Yu Ting; Li, Z.-R.; Chen, P.-S.

doi:10.1109/lpt.2007.893036

Cited by 26 publications

(7 citation statements)

References 12 publications

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“…One sees that the simulated curve (solid) and measured data (circled) agree well with each other. There is a small peak-enhancement at a certain frequency, which is similar to that reported previously [15,16]. This is beneficial to increase the bandwidth.…”

Section: Figuresupporting

confidence: 89%

Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Dai

Chen

Bowers

et al. 2010

Phys. Status Solidi (c)

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Section: Figuresupporting

confidence: 89%

Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Dai

Chen

Bowers

et al. 2010

Phys. Status Solidi (c)

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“…6.9, the inductance decreases with DC reverse bias, and also with optical power level. This is consistent with the work in [66][67][68], where it was found that the inductance is inversely proportional to the injected current, which increases with bias and optical power.…”

Section: Simulation Resultssupporting

confidence: 91%

“…6.6, where the bias is 30 V. The modulation frequencies are 1 GHz and 6 GHz and the optical power is 0.3 mW. Both the APD current and bias are modulated, and there is a phase delay between them similar to that reported in [66][67][68], the time-varying APD bias would directly affect the impact ionization process so that the instantaneous gain also changes with time. This influence will vary with modulation frequency and DC bias because the modulation frequency changes the phase delay and the DC bias changes the build-up time of the gain.…”

Section: Simulation Resultsmentioning

confidence: 93%

“…Enhanced frequency response and bandwidth were observed[66]. Bandwidth enhancement was also observed with Si/SiGe and Ge/Si APDs close to breakdown for photocurrents in the range of 1~10 mA[67][68][69][70].Daoxin Dai, et al used carrier transport equations and small signal analysis to derive an expression for the impedance of APD and concluded that an inductance should be included to complete the circuit model. The enhanced frequency response was described in terms of an LC resonance.…”

mentioning

confidence: 99%

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Theoretical Study and Monte Carlo Simulation of III-V Compound Photodiodes

Sun

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simulation tool is developed to theoretically study the characterisics of avalanche photodiodes (APDs) and high-power photodiodes and to design new structures with enhanced performance. Consistency is achieved between experiments and simulations. With respect to APDs, I have studied the noise of an InAlAs/InAlGaAs tandem APD structure. My simulations reproduced previous experimental results. I then used the model to modify the structure in order to achieve lower excess noise. The new device has been fabricated and confirms my prediction of lower noise. Recently it has been reported that InAs APDs can achieve extremely low noise. In this dissertation, two InAs APD structures are designed and fabricated. They exhibit low dark current and low excess noise factors. An AlAsSb blocking layer is used in order

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“…Kang et al in Si APDs [5] and J.W. Shi et al in Si/SiGe APDs [6]. We use detailed analysis of carrier transport to explain the effects observed in our devices and associate the frequency response enhancement primarily to the decrease of the transit time and multiplication time limitation due to space charge effects.…”

Section: Introductionmentioning

confidence: 92%

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product

Zaoui¹,

Chen²,

Bowers³

et al. 2009

Opt. Express

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In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.

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Impact-Ionization-Induced Bandwidth-Enhancement of a Si–SiGe-Based Avalanche Photodiode Operating at a Wavelength of 830 nm With a Gain-Bandwidth Product of 428 GHz

Cited by 26 publications

References 12 publications

Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Equivalent circuit model of a waveguide‐type Ge/Si avalanche photodetector

Theoretical Study and Monte Carlo Simulation of III-V Compound Photodiodes

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product

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