Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

Abstract

As semiconductor device dimensions decrease, the individual impurity atom position becomes a critical factor in determining device performance. We fabricated transistors with ordered and random dopant distributions on one side of the channel and evaluated the transconductance to investigate the impact of discrete dopant positions on the electron transport properties. The largest transconductance was observed when dopants were placed on the drain side in an ordered distribution; this was attributed to the suppression of injection velocity degradation on the source side and the uniformity of the electrostatic potential. Thus, the control of discrete dopant positions could enhance the device performance.

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

“…1 The phenomenon of device fluctuations becomes increasingly important. One of the most significant issues in the scaling is the threshold voltage (V th ) fluctuation induced by the process or device structure; [1][2][3][4][5][6][7][8][9][10][11] especially the discretedopant in the channel induced random dopant fluctuation (RDF), 2 which is the major source of V th fluctuation. It has been magnified by the scaling of device size (or area) because the electrical characteristics of the device become more and more sensitive to the number of dopants in the channel.…”

Probe assisted localized doping of aluminum into silicon substrates

“…In order to achieve reliable operation of nanoscale electronic devices, it is very important to precisely control the number and the placement of dopants in the semiconductor structure. [1][2][3] The ability to implant small clusters of dopants with a precision of a few nanometers may also make it possible to engineer the barrier height in metal-semiconductor junctions. 4 Due to the difficulties involved in realizing tightly controlled doping of nanoscale semiconductor structures, there has been increasing interest in new technologies that could enable the production of highly selective, uniform and ultra-shallow doped junctions at the channel regions in emerging nanoscale devices.…”

Suppressing Leakage by Localized Doping in Si Nanotransistor Channels

“…It is impossible to design functional systems if physical properties fluctuate wildly and randomly from device to device. One solution is to precisely control the position of the dopants [3], as demonstrated in a singledopant transistor [4]. However, incorporating disorder or randomness in nanoelectronics modeling remains of paramount importance [1].…”