2022
DOI: 10.1039/d1tc04760d
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Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures

Abstract: Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total. In search for universal factors limiting IQE, the...

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Cited by 5 publications
(3 citation statements)
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“…Table 1 also lists the parameters A, B, and C reported by other authors. [43,[45][46][47][48]50,66,67,[69][70][71][72]74] In general, the parameters A and B reported in the literature are of the order of 10 7 s −1 and 10 −11 cm 3 s −1 , respectively. [46,67,69] The parameter C found in the literature varies in the range of ≈10 −34 -10 −30 cm 6 s −1 .…”
Section: Resultsmentioning
confidence: 99%
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“…Table 1 also lists the parameters A, B, and C reported by other authors. [43,[45][46][47][48]50,66,67,[69][70][71][72]74] In general, the parameters A and B reported in the literature are of the order of 10 7 s −1 and 10 −11 cm 3 s −1 , respectively. [46,67,69] The parameter C found in the literature varies in the range of ≈10 −34 -10 −30 cm 6 s −1 .…”
Section: Resultsmentioning
confidence: 99%
“…#1 1.52 3.50 2, [ 50,67] 1, [48] 37, [46] 7, [50] 10, [ 45,48] 100, [ 50,67] 20, [48] 2.6, [46] #2 0.10 3.34 5.4, [69] 0.07-500, [70] 2, [ 69,71] 0.2-30, [70] 2, [68] 0.001, [72] 0.1, 40, [70] #3 1.54 3.80 0.26, [47] 5.4 [71] 0.3 [47] ∼1, [47] 20, [71] 5 [73] Figure negative)-left panel; current is flowing and the material gain becomes positive-middle panel; and current is flowing and a high gain is observed-right panel. The carrier distribution and the wavefunctions are plotted for the first three electron (heavy hole) levels.…”
Section: Resultsmentioning
confidence: 99%
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