Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

Berthet, Fanny; Guhel, Y.; Boudart, B.; Gualous, Hamid; Trolet, Jean Lionel; Piccione, M.; Gaquière, C.

doi:10.1049/el.2012.1966

Cited by 16 publications

(22 citation statements)

References 6 publications

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“…[14][15][16][17][18][19] In general, these devices exhibit negative threshold voltage shifts and in some cases an increase in 2DEG sheet concentration, in contrast to the results for proton-irradiated HEMTs. [14][15][16][17][18][19] Some of the important factors that could affect the electrical characteristics after the gamma-ray irradiations include the presence of a passivation layer, the metals used in the gate and Ohmic contacts, the native defect density in the barrier and GaN layers, and the gate length and gate width. 19 The passivation layer affects the transport in the channel in HEMTs and can reduce current fluctuations after irradiation.…”

Section: Introductionmentioning

confidence: 69%

“…Most of the radiation studies involving GaN-based HEMTs have involved proton or electron damage. [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] In terms of heterostructures, preliminary data from proton damage studies suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. 13 The effects of gamma-ray irradiation are also of fundamental interest for space applications and electronics in nuclear plants.…”

Section: Introductionmentioning

confidence: 70%

“…19 The passivation layer affects the transport in the channel in HEMTs and can reduce current fluctuations after irradiation. 15,17 In some cases, the type of metallization on semiconductors also affects the electrical characteristics under high dose gamma-ray irradiation. Gamma rays can cause reactions at the interface between the metal and semiconductor, resulting in high ideality factors and increased on-state resistance, 21 as well as reordering of native defects and impurities.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Kim

Liu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: Introductionmentioning

confidence: 69%

Section: Introductionmentioning

confidence: 70%

Section: Introductionmentioning

confidence: 99%

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Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Kim

Liu

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…14,15,31,40,42,48,59,61,62,134 In general, HEMTS that are irradiated with gamma rays exhibit negative threshold voltage shifts and in some cases an increase in 2DEG sheet concentration, in contrast to the results for proton-irradiated HEMTs. Compton electrons induced from γ-radiation create electron-hole pairs, thus changing occupancy of traps.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

“…Unlike proton irradiation, some studies claim that these defects can improve device performance such as increasing drain saturation current. 59,60 These defects are believed to be nitrogen vacancies that have electrical activation energies about 216 meV from the conduction band. Nitrogen vacancies act as donors and increase the effective channel doping and thus increase drain-source current in HEMTs.…”

Section: Summary Of Radiation Effects In Ganmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

286

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Strenaer,

Guhel,

Gaquière

et al. 2024

Physica Status Solidi (a)

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The aim of this article is to show that it is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using Infra‐Red (IR) illumination. This technique avoids the time‐consuming task of performing electrical measurements at different temperatures in order to determine the activation energies of the electron traps using Arrhenius laws. Thus, a deep level at 1.3 eV was detected and attributed to the presence of carbon in GaN buffer of the component. Moreover, we have highlighted that the trapping effect can be screened when the transistors are biased with a high drain‐source voltage during pulsed measurements.This article is protected by copyright. All rights reserved.

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Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

Cited by 16 publications

References 6 publications

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors

Review—Ionizing Radiation Damage Effects on GaN Devices

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

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