Impact of MOSFET oxide breakdown on digital circuit operation and reliability

Kaczer, B.; Degraeve, R.; Groeseneken, G.; Rasras, Mahmoud; Kubicek, Stefan; Vandamme, E.P.; Badenes, G.

doi:10.1109/iedm.2000.904379

Cited by 79 publications

(31 citation statements)

References 3 publications

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“…The results showed that the postbreakdown leakage current was a strong function of the current available during breakdown indicating that short channel MOSFETs would probably survive under actual circuit operating conditions. Another study performed by Kaczer et al [110] showed that a ring oscillator circuit continued to function even after several devices comprising the circuit experienced breakdown. The increased leakage current in the ruptured devices affected the frequency of oscillation, standby current, and dynamic supply current, however, the logic operation was not destroyed.…”

Section: ) Device-level Failurementioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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Abstract-The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO 2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.

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Section: ) Device-level Failurementioning

confidence: 99%

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Suehle

2002

IEEE Trans. Electron Devices

145

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“…After a "hard" breakdown, the device is clearly nonfunctional by any ordinary criterion, exhibiting a negative drain current when the gate-to-drain leakage exceeds the normal transistor on current [194]. However, even a hard breakdown may not completely destroy circuit functionality: Kaczer et al [197] showed that in some cases a circuit may be able to survive an oxide breakdown that previously would have been assumed to be catastrophic.…”

Section: B Device Breakdownmentioning

confidence: 99%

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Stathis

2001

IEEE Trans. Device Mater. Relib.

163

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Abstract-The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2 nm. This paper will review the physics and statistics of dielectric wearout and breakdown in ultrathin SiO 2 -based gate dielectrics. Electrons or holes tunneling through the gate oxide generate defects until a critical density is reached and the oxide breaks down. The critical defect density is explained by the formation of a percolation path of defects across the oxide. Only 1% of these paths ultimately lead to destructive breakdown, and the microscopic nature of these defects is not known. The rate of defect generation decreases approximately exponentially with supply voltage, below a threshold voltage of about 5 V for hot electron-induced hydrogen release. However, the tunnel current also increases exponentially with decreasing oxide thickness, leading to a decreasing time-to-breakdown and a diminishing margin for reliability as device dimensions are scaled. Estimating the reliability of the dielectric requires an extrapolation from the measurement conditions (e.g., higher voltage) to operation conditions. Because of the diminished reliability margin, it has become imperative to try to reduce the error in this extrapolation.Long-term ( 1 year) stress experiments are now being used to measure the wearout and breakdown of ultrathin ( 2 nm) dielectric films as close as possible to operating conditions. These measurements have revealed the details of the voltage dependence of the defect generation rate and critical defect density, allowing better modeling of the voltage dependence of the time-to-breakdown. Such measurements are used to guide the technology development prior to the manufacturing stage. We then discuss the nature of the electrical conduction through a breakdown spot and the effect of the oxide breakdown on device and circuit performance. In some cases, an oxide breakdown does not lead to immediate circuit failure, so more research is needed in order to develop a quantitative methodology for predicting the reliability of circuits.

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“…While hard breakdowns are usually catastrophic irrespective of the circuit type, digital logic circuits are mostly impervious to soft breakdowns [24]. However, soft breakdowns can lead to functional failures of memories, particularly SRAM since these circuits are very sensitive to changes in leakage currents of transistors in the bit cell.…”

Section: Time-dependent Dielectric Breakdown Of Gate Dielectricsmentioning

confidence: 99%

Reliability of silicon integrated circuits

Oates

2015

Reliability Characterisation of Electrical and Electronic Systems

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Impact of MOSFET oxide breakdown on digital circuit operation and reliability

Cited by 79 publications

References 3 publications

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits

Reliability of silicon integrated circuits

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